<?xml version="1.0" encoding="UTF-8"?> 
		<rss version="2.0" xmlns:content="http://purl.org/rss/1.0/modules/content/">
		  <channel>
		    <image>
			<title>patentstorm.us</title>
			<width>258</width>
			<height>85</height>
			<link>http://www.patentstorm.us/</link>
			<url>http://www.patentstorm.us/images/logo.gif</url>
			</image>
					
		    <title>PatentStorm ->  Applications -> Stone working</title>
		    <link>http://www.patentstorm.us/rss/class/applications/rss-125.xml</link>
		    <description>Recent patent applications filings in USPTO Class 125 Stone working.</description>
		    <pubDate>Thu, 9 Feb 2012 15:01:33</pubDate>
		    <managingEditor>patents@patentstorm.us</managingEditor>
		    <language>en</language><item>
			         <title><![CDATA[METHODS TO SLICE A SILICON INGOT]]></title>
			         <link>http://www.patentstorm.us/applications/20120024761/description.html</link>
			         <description><![CDATA[<ul><li><strong>Application Number:</strong> &nbsp;20120024761</li><li><strong>Publication Date:</strong> &nbsp;2012-02-02</li><li><strong>Inventors:</strong> &nbsp;Ragan, Tracy M.; Grabbe, Alexis</li></ul>The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw ...<br />]]></description>		         
			         <guid isPermaLink="false">20120024761</guid>
			      </item>
<item>
			         <title><![CDATA[High Impact Resistant Tool]]></title>
			         <link>http://www.patentstorm.us/applications/20120023833/description.html</link>
			         <description><![CDATA[<ul><li><strong>Application Number:</strong> &nbsp;20120023833</li><li><strong>Publication Date:</strong> &nbsp;2012-02-02</li><li><strong>Inventors:</strong> &nbsp;Webb, Casey; Beazer, Michael; Crockett, Ronald B.; Hall, David R.</li></ul>In one aspect of the present invention, a high impact resistant tool comprises a sintered polycrystalline diamond body bonded to a cemented metal carbide substrate at an interface, the body comprising a substantially pointed geometry with an apex, the apex comprising a curved surface that joins a leading side and a trailing side of the body at a first and second transitions respectively, an apex width between the first and second transitions is less than a third of a width of the substrate, and ...<br />]]></description>		         
			         <guid isPermaLink="false">20120023833</guid>
			      </item>
<item>
			         <title><![CDATA[METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL, AND SAPPHIRE SINGLE CRYSTAL OBTAINED BY THE METHOD]]></title>
			         <link>http://www.patentstorm.us/applications/20120015799/description.html</link>
			         <description><![CDATA[<ul><li><strong>Application Number:</strong> &nbsp;20120015799</li><li><strong>Publication Date:</strong> &nbsp;2012-01-19</li><li><strong>Inventor:</strong> &nbsp;Shonai, Tomohiro</li></ul>A method for producing a sapphire single crystal, which includes: performing a sapphire single crystal growth step wherein a sapphire ingot, which is an ingot of sapphire single crystal, is produced (step <b>101</b>); performing a subsequent ingot heating step wherein the sapphire ingot obtained in the sapphire single crystal growth step is heated (step <b>102</b>); and performing a subsequent ingot processing step wherein the heated sapphire ingot is machined (step <b>103</b>). In the ingot ...<br />]]></description>		         
			         <guid isPermaLink="false">20120015799</guid>
			      </item>
</channel>
		</rss>
