Technique for correcting hotspots in mask patterns and write patterns

Patent 8082525 Issued on December 20, 2011. Estimated Expiration Date:

April 14, 2029. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

System and method of correcting mask rule violations after optical proximity correction
Patent #: 7062748
Issued on: 06/13/2006
Inventor: Mellmann

Method for generating a mask layout and constructing an integrated circuit
Patent #: 7784015
Issued on: 08/24/2010
Inventor: Pitts

Electrically driven optical proximity correction Patent #: 7865864
Issued on: 01/04/2011
Inventor: Banerjee, et al.

Inventors

Assignee

Luminescent Technologies, Inc.

Application

No. 12423693 filed on 04/14/2009

US Classes:

700/120Stereolithography , 716/111

Examiners

Primary: Kik, Phallaka

Attorney, Agent or Firm

WILSON SONSINI GOODRICH & ROSATI

Foreign Patent References

WO 2008097219 WO 08/01/2008

International Classes

G06F 17/50
G06F 19/00
G03F 1/00
G21K 5/00

Abstract

Embodiments of a method for determining a mask pattern to be used on a photo-mask in a lithography process are described. This method may be performed by a computer system. During operation, this computer system receives at least a portion of a first mask pattern including first regions that violate pre-determined rules associated with the photo-mask. Next, the computer system determines a second mask pattern based on at least the portion of the first mask pattern, where the second mask pattern includes second regions that are estimated to comply with the pre-determined rules. Note that the second regions correspond to the first regions, and the second mask pattern is determined using a different technique than that used to determine the first mask pattern.