Photoresist strip method for low-k dielectrics

Patent 8058178 Issued on November 15, 2011. Estimated Expiration Date:

July 31, 2029. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

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Inventors

Assignee

Novellus Systems, Inc.

Application

No. 12533461 filed on 07/31/2009

US Classes:

438/710By creating electric field (e.g., plasma, glow discharge, etc.)

Examiners

Primary: Estrada, Michelle

Attorney, Agent or Firm

Weaver Austin Villeneuve & Sampson LLP

International Classes

H01L 21/302
H01L 21/461

Abstract

The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.

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