Photoelectric conversion device and solid-state imaging device

Patent 7952156 Issued on May 31, 2011. Estimated Expiration Date:

September 14, 2026. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Organic thin film semiconductor device
Patent #: 5079595
Issued on: 01/07/1992
Inventor: Suzuki, et al.

Solid-state imaging device suppressing dark-current noise
Patent #: 5343061
Issued on: 08/30/1994
Inventor: Yamashita, et al.

Trichromatic sensor
Patent #: 5923049
Issued on: 07/13/1999
Inventor: Bohm, et al.

Color separation in an active pixel cell imaging array using a triple-well structure
Patent #: 5965875
Issued on: 10/12/1999
Inventor: Merrill

Amorphous silicon germanium thin film and photovoltaic element
Patent #: 6080998
Issued on: 06/27/2000
Inventor: Shima, et al.

Solid state image sensor
Patent #: 6081018
Issued on: 06/27/2000
Inventor: Nakashiba, et al.

Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element
Patent #: 6252286
Issued on: 06/26/2001
Inventor: Arai

Functional device and multi-component multi-phase type polymeric shaped material
Patent #: 6391471
Issued on: 05/21/2002
Inventor: Hiraoka, et al.

Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus
Patent #: 6545331
Issued on: 04/08/2003
Inventor: Miida

Vertical color filter detector group and array
Patent #: 6632701
Issued on: 10/14/2003
Inventor: Merrill

More ...

Inventors

Assignee

Fujifilm Corporation

Application

No. 11520633 filed on 09/14/2006

US Classes:

257/435With optical shield or mask means

Examiners

Primary: Andújar, Leonardo
Assistant: Harriston, William

Attorney, Agent or Firm

SUGHRUE MION, PLLC

Foreign Patent References

5-335544 JP 12/01/1993
6-332200 JP 12/01/1994
07-038136 JP 02/01/1995
11-052352 JP 02/01/1999
2002-162474 JP 06/01/2002
2003-288993 JP 10/01/2003
2003-332551 JP 11/01/2003
2004-165242 JP 06/01/2004
2007-12982 JP 01/01/2007

International Class

H01L 31/0232

Abstract

A photoelectric conversion device comprising a photo-electric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole.

Other References

Japanese Office Action issued in Application No. 2005-267138, dated Dec. 7, 2010.
Japanese Office Action issued in Application No.: 2005-267138, dated Aug. 24, 2010.