Plasma reactor for the treatment of large size substrates
Patent 7784426 Issued on August 31, 2010. Estimated Expiration Date: 
October 16, 2027. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 16, 2027. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPlasma etching using improved electrode Plasma processing apparatus Dry etching method and apparatus for manufacturing a semiconductor device Gas diffuser having varying thickness and nozzle density for semiconductor device fabrication and reaction furnace with gas diffuser Plasma CVD film-forming device Patent #: 6740367 InventorAssigneeApplicationNo. 11872957 filed on 10/16/2007US Classes:118/723EHaving glow discharge electrodes (e.g., DC, AC, RF, etc.)ExaminersPrimary: Hassanzadeh, ParvizAssistant: Crowell, Michelle Attorney, Agent or FirmForeign Patent References
International ClassC23C 16/505AbstractA radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.56 MHz is connected to an electrode for generating a plasma discharge in and a gas outlet evacuates process gas. A dielectric layer has a convex surface engaging the concave electrode surface and an opposite planar surface. The substrate supporting surface receives a substrate of at least 0.7 m and defines a boundary of the process area to be exposed to the plasma. The dielectric layer is electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform for a distribution profile to compensate process non-uniformity along the working surface.Field of SearchHaving glow discharge electrodes (e.g., DC, AC, RF, etc.)Having glow discharge electrode gas energizing means Electrically coupled to a power supply or matching circuit Including more than two electrodes (e.g., triode reactors) With magnetic field generating means for control of the etchant gas Parallel plate electrodes | |
