High precision power detector
Patent 7504813 Issued on March 17, 2009. Estimated Expiration Date: 
October 17, 2025. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 17, 2025. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesTemperature compensated FET power detector Temperature compensated wide dynamic range power detection circuitry for portable RF transmission terminals High dynamic range millimeter wave power detector with temperature compensation Integrated power detector with temperature compensation Patent #: 6531860 InventorAssigneeApplicationNo. 11250375 filed on 10/17/2005US Classes:323/312For current stabilizationExaminersPrimary: Nguyen, Matthew VAttorney, Agent or FirmInternational ClassesG05F 3/04G05F 3/16 AbstractA power detector having temperature compensation for improved measurement performance includes a pair of rectifier transistors coupled to a differential input signal biased by a first temperature dependent current. An output of the pair of rectifier transistors provides a first component of a differential DC output signal. The first component of the differential DC output signal includes a DC voltage proportional to an amplitude of the differential input signal plus an offset voltage. The power detector further includes a reference transistor biased by a reference current. The reference current includes a second temperature dependent current and a temperature independent offset current for temperature compensation. An output of the reference transistor provides a second component of the differential DC output signal that includes a reference voltage. The temperature independent offset current is adjusted such that the reference voltage substantially equals the offset voltage, thereby improving the precision of the power detector.Field of SearchIncluding plural final control devicesSwitched (e.g., on-off control) For current stabilization Including parallel paths (e.g., current mirror) With amplifier connected to or between current paths With switched final control device TEMPERATURE COMPENSATION OF SEMICONDUCTOR Thermal (e.g., compensation) With voltage or current conversion (e.g., D.C. to A.C., 60 to 1000) With amplifier or space discharge device Feedback amplifiers WITH AMPLIFIER CONDITION INDICATING OR TESTING MEANS Including differential amplifier Having field effect transistor Having temperature compensation means Having D.C. feedback bias control for stabilization Having signal feedback means Having particular biasing arrangement Including temperature compensation means Including D.C. feedback bias control for stabilization | |
