Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh

Patent 7372116 Issued on May 13, 2008. Estimated Expiration Date:

June 16, 2024. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

3607460

3741823

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Inventors

Assignee

Hitachi Global Storage Technologies Netherlands B.V.

Application

No. 10869315 filed on 06/16/2004

US Classes:

257/421, Magnetic field257/E21.665, Magnetic nonvolatile memory structures, e.g., MRAM (EPO)365/171, Magnetic thin film428/800, MAGNETIC RECORDING COMPONENT OR STOCK148/306, Iron base (i.e., ferrous)148/103, Treatment in a magnetic field365/158, Magnetoresistive428/811.2, Multilayer257/3, With means to localize region of conduction (e.g., "pore" structure)365/173, Multiple magnetic storage layers360/324.12, Detail of free layer or additional film for affecting or biasing the free layer360/324.11, Detail of pinned film or additional film for affecting or biasing the pinned film360/324.2, Having tunnel junction effect336/200, Printed circuit-type coil338/32R, Magnetic field or compass (e.g., Hall effect type)365/211, Temperature compensation360/110, HEAD257/295, With ferroelectric material layer438/3HAVING MAGNETIC OR FERROELECTRIC COMPONENT

Examiners

Primary: Baumeister, B. William
Assistant: Such, Matthew W.

Attorney, Agent or Firm

Zilka-Kotab, PC

International Classes

H01L 29/82
G11C 11/14

Abstract

A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.

Other References

J.M. Daughton and A.V. Pohm, “Design of Curie Point Written Magnetoresistance Radom Access Memory Cells,” May 15, 2003, vol. 93, No. 10, Journal of Applied Physics.
Annaorazov, M. P. et al. “Anomalously High Entropy Change in FeRh Alloy.” J. Appl. Phys. 79 (1996): 1689-1695.
Farrow, R. F. C. et al. “MnxPt1-x: A New Exchange Bias Material for Permalloy.” J. Appl. Phys. 81 (1997): 4986-4988.
Kouvel, J. S. “Unusual Nature of the Abrupt Magnetic Transition in FeRh and Its Pseudobinary Variants.” J. Appl. Phys. 37 (1966): 1257-1258.