Magnetic memory array using magnetic tunnel junction devices in the memory cells
Low switching field magnetic tunneling junction for high density arrays
Thermally-assisted magnetic random access memory (MRAM)
Magnetic random access memory with thermally stable magnetic tunnel junction cells
Magnetic memory device and magnetic substrate
Thermally-assisted switching of magnetic memory elements
Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells
ApplicationNo. 10869315 filed on 06/16/2004
US Classes:257/421, Magnetic field257/E21.665, Magnetic nonvolatile memory structures, e.g., MRAM (EPO)365/171, Magnetic thin film428/800, MAGNETIC RECORDING COMPONENT OR STOCK148/306, Iron base (i.e., ferrous)148/103, Treatment in a magnetic field365/158, Magnetoresistive428/811.2, Multilayer257/3, With means to localize region of conduction (e.g., "pore" structure)365/173, Multiple magnetic storage layers360/324.12, Detail of free layer or additional film for affecting or biasing the free layer360/324.11, Detail of pinned film or additional film for affecting or biasing the pinned film360/324.2, Having tunnel junction effect336/200, Printed circuit-type coil338/32R, Magnetic field or compass (e.g., Hall effect type)365/211, Temperature compensation360/110, HEAD257/295, With ferroelectric material layer438/3HAVING MAGNETIC OR FERROELECTRIC COMPONENT
ExaminersPrimary: Baumeister, B. William
Assistant: Such, Matthew W.
Attorney, Agent or Firm
International ClassesH01L 29/82
AbstractA magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.