Enhanced probe for gathering data from semiconductor devices
Nano-manipulation by gyration
Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe Patent #: 7141999
ApplicationNo. 11219732 filed on 09/07/2005
US Classes:250/306, INSPECTION OF SOLIDS OR LIQUIDS BY CHARGED PARTICLES250/307, Methods438/48, MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL324/762, Cantilever324/754, With probe elements977/879, Material977/878, Shape/taper977/875, With tip detail369/43, WITH SERVO POSITIONING OF TRANSDUCER ASSEMBLY OVER TRACK COMBINED WITH INFORMATION SIGNAL PROCESSING369/126, Electrical modification or sensing of storage medium (e.g., capacitive, resistive, electrostatic charge)422/55, Structured visual or optical indicator, per se422/57Having coated reagent
ExaminersPrimary: Berman, Jack I.
Assistant: Hashmi, Zia R.
Attorney, Agent or Firm
Foreign Patent References
International ClassG21K 7/00
AbstractProvided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.