U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate

Patent 7317179 Issued on January 8, 2008. Estimated Expiration Date: Icon_subject October 28, 2025. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

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Inventors

Assignee

Application

No. 11261845 filed on 10/28/2005

US Classes:

250/201.1, Photocell controls its own optical systems359/204, Utilizing plural light beams359/345, Particular pumping type (e.g., electrical, optical, nuclear, magnetic, etc.)342/34, Ground control approach (GCA)250/281, IONIC SEPARATION OR ANALYSIS359/276, Amplitude modulation359/487, By reflection or refraction (e.g., Brewster angle)372/32, Frequency361/270, With capacitor element372/19, Mode discrimination372/58, With means for controlling gas flow372/57, Excimer or exciplex376/377, With particular flow directing or diverting means (e.g., flow baffle)376/353, With particular control rod guide structure372/93, Folded cavity336/60, Ventilating passages (e.g., by coil section or core part spacers)307/419, Magnetic pulse generator436/124, HALOGEN CONTAINING372/25, Control of pulse characteristics372/20, Tuning372/21, Nonlinear device372/59, Gas maintenance (e.g., purification, replenishment, etc.)348/31, BACK SCATTER REDUCTION376/210, By coolant flow436/55, CONDITION RESPONSIVE CONTROL372/95, Unstable resonator398/104, UNDERWATER372/28, Frequency372/37, HAVING AN APPLIED MAGNETIC FIELD372/56, Metal vapor376/205, Between pressure vessel cover and vessel or portion thereof356/218, Photoelectric359/566, From grating318/558, MISCELLANEOUS422/186, With means applying electromagnetic wave energy or corpuscular radiation to reactants for initiating or perfecting chemical reaction123/565, Supercharger is driven independently of the engine356/451, Spectroscopy331/81, With electron bunching or velocity variation means248/176.1, To hold a particular article438/151, Having insulated gate372/87, Having particular electrode structure372/99, Reflector372/60, Including a specified gas additive372/102, Grating438/689, CHEMICAL ETCHING219/121.61, Beam energy control73/1.72, Valve438/150, Specified crystallographic orientation372/38.1, PARTICULAR COMPONENT CIRCUITRY372/33, PARTICULAR OPERATING COMPENSATION MEANS359/623, Cylindrical lenslets219/121.62, Condition responsive438/166, Including recrystallization step438/487, Utilizing wave energy (e.g., laser, electron beam, etc.)117/43, Distinctly layered product (e.g., twin, SOI, epitaxial crystallization)372/38.04, Power supply359/341.3, Pumping372/101, Lens or lens system398/178, Specific optical waveguide438/164, Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)219/121.72, Methods356/450, BY LIGHT INTERFERENCE (E.G., INTERFEROMETER)359/355, Lens, lens system or component372/15, Rotating mirror250/205, Controlling light source intensity398/78, Multiple Access (e.g., CDMA)372/29.01, Having particular beam control circuit component372/61, Discharge tube feature356/333, In a double monochromator372/98, Specified cavity component219/121.65, Melting372/55, Gas257/45, Elongated alloyed region (e.g., thermal gradient zone melting, TGZM)355/67, Illumination systems or details428/446, Of silicon containing (not as silicon alloy)250/372, Ultraviolet light responsive means700/121, Integrated circuit production or semiconductor fabrication356/454, Fabry-Perot type or Etalon Type372/90, Gas dynamic336/57, With inductor insulating fluid circulating means356/334, With diffraction grating means372/22, Frequency multiplying (e.g., harmonic generator)250/492.2, Irradiation of semiconductor devices356/452, Having particular linear mirror drive or configuration514/527, C=O other than as ketone or aldehyde355/133, MISCELLANEOUS378/34, Lithography117/84, FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)219/121.73, Shaping359/457, With Fresnel lens356/521Having wavefront division (by diffraction)

Examiners

Primary: Epps, Georgia
Assistant: Ko, Tony

Attorney, Agent or Firm

Foreign Patent References

  • 2601410 JP 01/01/1997
  • 09-097951 JP 04/01/1997
  • 2701184 JP 10/01/1997
  • 410003045 JP 01/01/1998
  • 10-074993 JP 03/01/1998
  • 2000-022255 JP 01/01/2000
  • 2001-332793 JP 11/01/2001
  • 2002-208746 JP 07/01/2002
  • 3297108 JP 07/01/2002
  • 2002-294856 JP 10/01/2002

International Class

G01B 9/02

Abstract

Systems and methods are disclosed for shaping and homogenizing a laser beam for interaction with a film. The shaping and homogenizing system may include a lens array and a lens that is positioned to receive laser light from the lens array and produce a respective elongated image in a plane for each lens in the lens array. In addition, the system may include a beam stop having an edge that is positioned in the plane, and a moveable mount rotating a lens of the lens array to vary an alignment between one of the elongated images and the beam stop edge.

Other References

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