Bandgap reference circuit
January 14, 2025. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCurrent reference circuit using PTAT and inverse PTAT subcircuits Adjustable temperature coefficient current reference Current reference circuit having both a PTAT subcircuit and an inverse PTAT subcircuit Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture Temperature compensated high precision current source Low voltage supply bandgap reference circuit using PTAT and PTVBE current source Bandgap circuit Low noise bandgap voltage reference circuit Patent #: 6462526 InventorAssigneeApplicationNo. 11037389 filed on 01/14/2005US Classes:327/538, Stabilized (e.g., compensated, regulated, maintained, etc.)327/545, Including signal protection or bias preservation327/546, With field-effect transistor323/313, To derive a voltage reference (e.g., band gap regulator)341/155, Analog to digital conversion327/513, With compensation for temperature fluctuations327/543, Using field-effect transistor323/316, With amplifier connected to or between current paths327/539, Using bandgap327/540, With voltage source regulating323/312For current stabilizationExaminersPrimary: Lam, Tuan T.Attorney, Agent or FirmForeign Patent References
International ClassG05F 1/10AbstractA bandgap reference circuit is proposed. To remove parasitic effects, this includes the combination of a first circuit section (1), which generates a temperature-proportional voltage, and a second circuit section (2), which generates an inversely temperature-proportional voltage. The bandgap reference circuit generates a bandgap reference voltage (Ubg) as the sum of the temperature-proportional voltage of the first circuit section (1) and the inversely temperature-proportional voltage of the second circuit section (2). To remove the parasitic effects, both circuit sections (1, 2) include bipolar transistor circuits with multiple bipolar transistors (Q1-Q4; Q5-Q8), so that both the temperature-proportional voltage and the inversely temperature-proportional voltage are generated in the form of a sum and difference formation of multiple base-emitter voltages of the appropriate bipolar transistors. | |
