Current reference circuit using PTAT and inverse PTAT subcircuits
Adjustable temperature coefficient current reference
Current reference circuit having both a PTAT subcircuit and an inverse PTAT subcircuit
Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
Temperature compensated high precision current source
Low voltage supply bandgap reference circuit using PTAT and PTVBE current source
Low noise bandgap voltage reference circuit Patent #: 6462526
ApplicationNo. 11037389 filed on 01/14/2005
US Classes:327/538, Stabilized (e.g., compensated, regulated, maintained, etc.)327/545, Including signal protection or bias preservation327/546, With field-effect transistor323/313, To derive a voltage reference (e.g., band gap regulator)341/155, Analog to digital conversion327/513, With compensation for temperature fluctuations327/543, Using field-effect transistor323/316, With amplifier connected to or between current paths327/539, Using bandgap327/540, With voltage source regulating323/312For current stabilization
ExaminersPrimary: Lam, Tuan T.
Attorney, Agent or Firm
Foreign Patent References
International ClassG05F 1/10
AbstractA bandgap reference circuit is proposed. To remove parasitic effects, this includes the combination of a first circuit section (1), which generates a temperature-proportional voltage, and a second circuit section (2), which generates an inversely temperature-proportional voltage. The bandgap reference circuit generates a bandgap reference voltage (Ubg) as the sum of the temperature-proportional voltage of the first circuit section (1) and the inversely temperature-proportional voltage of the second circuit section (2). To remove the parasitic effects, both circuit sections (1, 2) include bipolar transistor circuits with multiple bipolar transistors (Q1-Q4; Q5-Q8), so that both the temperature-proportional voltage and the inversely temperature-proportional voltage are generated in the form of a sum and difference formation of multiple base-emitter voltages of the appropriate bipolar transistors.