U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Amplifier; and transmitter and communication device incorporating the same

Patent 7199652 Issued on April 3, 2007. Estimated Expiration Date: Icon_subject November 16, 2024. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Amplifier circuit with bipolar transistors
Patent #: 4845441
Issued on: 07/04/1989
Inventor: Dick

Low phase noise, wide tuning range oscillator utilizing a one port saw resonator and method of operation
Patent #: 6239664
Issued on: 05/29/2001
Inventor: Northam

Power- conserving drive-modulation method for envelope-elimination-and-restoration (EER) transmitters
Patent #: 6256482
Issued on: 07/03/2001
Inventor: Raab

Feedback type variable gain amplifier
Patent #: 6285257
Issued on: 09/04/2001
Inventor: Abe, et al.

Method and apparatus for cascaded ground return amplifier
Patent #: 6300827
Issued on: 10/09/2001
Inventor: King

Transistor amplifier providing improved linear and return loss performance characteristics Patent #: 6441689
Issued on: 08/27/2002
Inventor: Joseph

Inventors

Assignee

Application

No. 10988499 filed on 11/16/2004

US Classes:

327/560, Nonlinear amplifying circuit330/294, Having frequency-responsive means or phase-shift means in feedback path330/302, Including frequency-responsive means in the signal transmission path42/16, Rearward455/108, Amplitude modulation330/282, Having feedback means acting as variable impedance330/65, INVOLVING STRUCTURE OTHER THAN THAT OF TRANSFORMERS PER SE455/341, Amplifier330/311Having different configurations

Examiners

Primary: Ton, My-Trang Nu

Attorney, Agent or Firm

International Classes

G06G 7/12
H03F 1/34

Abstract

The present invention provides an amplifier for amplifying a high-frequency signal and outputting an amplified signal. The amplifier includes: an amplification element which is a bipolar transistor or a field-effect transistor; and an inductor connected between a base and a collector or between a gate and a drain of the amplification element. The inductance of the inductor is chosen so that, within a predetermined frequency range, a parallel resonance occurs with a parasitic capacitor of the amplification element and an intrinsic capacitor of the amplification element, the intrinsic capacitor being a base-collector capacitance or a gate-drain capacitance.

Other References

  • Behzad Razavi, “RF Microelectronics”, Prentice Hall PTR, Nov. 1, 1997, p. 169.
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