Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability
Patent 7180096 Issued on February 20, 2007. Estimated Expiration Date: 
October 12, 2024. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 12, 2024. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsAssigneeApplicationNo. 10964350 filed on 10/12/2004US Classes:257/79, INCOHERENT LIGHT EMITTER STRUCTURE257/85, With heterojunction257/194, Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))257/94, With heterojunction257/103With particular semiconductor materialExaminersPrimary: Doan, Theresa T.International ClassesH01L 27/15H01L 31/12 AbstractAn epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). This anti-ESD thin layer greatly improves the GaN-based LEDs' reverse withstanding voltage and resistivity to ESD, which in turn extends the GaN-based LEDs' operation life significantly. | |
