ApplicationNo. 10964350 filed on 10/12/2004
US Classes:257/79, INCOHERENT LIGHT EMITTER STRUCTURE257/85, With heterojunction257/194, Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))257/94, With heterojunction257/103With particular semiconductor material
ExaminersPrimary: Doan, Theresa T.
International ClassesH01L 27/15
AbstractAn epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). This anti-ESD thin layer greatly improves the GaN-based LEDs' reverse withstanding voltage and resistivity to ESD, which in turn extends the GaN-based LEDs' operation life significantly.