Abstract Claims Description Full Text

Abstract

A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

Other References

• Knutson et al, Modeling Of Radiation Heat Transfer And Wafer Temperatures In A Complex Three-Dimensional Rapid Thermal Processing Chamber, Aug. 31, 1994, 2^nd International Rapid Thermal Processing Conference, Monterey California.
• Burggraaf, Rapid Wafer Heating: Status 1983, Dec. 1983, Semiconductor International, pp. 69-74.
• Gelpey et al, Process Control for a Rapid Optical Annealing System, 1986, Mat Res Soc Symp Proc, vol. 52, Materials Research Society.
• Wilson et al, an Overview and Comparison of Rapid Thermal Processing Equipment: A Users Viewpoint, 1986, Mat Res Soc Symp Proc, vol. 52, Materials Research Society.
• Blake et al, Slip Free Rapid Thermal Processing, 1987, Mat Res Soc Symp Proc, vol. 92, Materials Research Society.
• Celler et al, Drift of Arsenic in SiO₂ in a Lamp Furnace with a Built-in Temperature Gradient, 1987, Mat Res Soc Symp Proc, vol. 92, Materials Research Society.
• Lord, Thermal and Stress Analysis of Semiconductor Wafers in a Rapid Thermal Processing Oven, Aug. 1988, IEEE Trnasactions on Semiconductor Manufacturing, vol. 1, No. 3, pp. 103-114.
• Hill et al, Reduced Thermal Processing for ULSI, 1989, Plenum Press, pp. 143-180.
• Kakoschke, Is There a Way to a Perfect Rapid Thermal Processing System?, 1991, Mat Res Soc Symp Proc, vol. 224, Materials Research Society, pp. 159-170.
• Kakoschke, Simulation of Temperature Effects During Rapid Thermal Processing,, 1989, Mat Res Soc Symp Proc, vol. 146, Materials Research Society, pp. 473-483.
• Vandenabeele et al, Impact of Patterned Layers on Temperature Non-uniformity During Rapid Thermal Processing for VSLI-Application, 1989, Mat Res Soc Symp Proc, vol. 146, Materials Research Society, pp. 149-160.
• Nulman et al, Pyrometric Emissivity Measurements and Compensation in an RTP Chamber, 1989, Mat Res Soc Symp Proc, vol. 146, Materials Research Society, pp. 461-466.
• Dilhac et al, Adaptive Process Control for a Rapid Thermal Processor, 1990, SPIE, vol. 1393, Rapid Thermal and Related Processing Techniques, pp. 395-403.
• Dilhac et al, Thermal Model for Rapid Thermal Processors: Theory and Applications, Sep. 8, 1993, 1^st International Rapid Thermal Processing Conference, Scottsdale, Arizona.
• Wei et al, Transient Processing of Titanium Silicides in a Non-Isothermal Reactor, 1985, Mat Res Soc Symp Proc, vol. 35, Materials Research Society, pp. 465-470.
• Pettibone et al, The Effect of Thin Dielectric Films on the Accuracy of Pyrometric Temperature Measurements, 1986, Mat Res Soc Symp Proc, vol. 52, Materials Research Society, pp. 210-216.
• Dilhac et al, Thermal Modeling of a Wafer in a Rapid Thermal Processor, Nov. 1995, IEEE Transactions on Semiconductor Manufacturing, vol. 8, No. 4, pp. 432-439.
• Henda et al, Investigation of the Thermal Behavior of a RTP Furnace, Aug. 1995, IEEE Transactions on Semiconductor Manufacturing, vol. 8, No. 3, pp. 362-365.