IC tester joined with ion beam tester and the detection method of the failure part of IC
Method for detecting an IC defect using charged particle beam
IC analysis system having charged particle beam apparatus for improved contrast image
Method for making specimen and apparatus thereof
Electronic component failure indicator
Method and apparatus for detecting an IC defect using charged particle beam
Method and apparatus for predictive diagnosis of moving machine parts Patent #: 5852793
ApplicationNo. 10706304 filed on 11/12/2003
US Classes:702/183, Diagnostic analysis700/121, Integrated circuit production or semiconductor fabrication702/117, Of circuit702/118, Testing multiple circuits702/185, Cause or fault identification714/46, Operator interface for diagnosing or testing355/53, Step and repeat324/751, Using electron beam probe382/144, Mask inspection (e.g., semiconductor photomask)250/311, Electron microscope type702/82Having judging means (e.g., accept/reject)
ExaminersPrimary: Tsai, Carol S. W.
Attorney, Agent or Firm
Foreign Patent References
International ClassG06F 19/00
AbstractThe present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.