U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Differential current evaluation circuit and sense amplifier circuit for evaluating a memory state of an SRAM semiconductor memory cell

Patent 7099218 Issued on August 29, 2006. Estimated Expiration Date: Icon_subject May 2, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Current-mirror type sense amplifier
Patent #: 4697112
Issued on: 09/29/1987
Inventor: Ohtani ,   et al.

Output feedback control circuit for integrated circuit device
Patent #: 5015891
Issued on: 05/14/1991
Inventor: Choi

Differential sense amplifier
Patent #: 5162681
Issued on: 11/10/1992
Inventor: Lee

Integrated circuit having a sense amplifier
Patent #: 5253137
Issued on: 10/12/1993
Inventor: Seevinck

Semiconductor storage device
Patent #: 5710736
Issued on: 01/20/1998
Inventor: Masuda, et al.

Memory cell sensing method and circuitry for bit line equalization
Patent #: 5828614
Issued on: 10/27/1998
Inventor: Gradinariu

Self cut-off type sense amplifier operable over a wide range of power supply voltages
Patent #: 5872465
Issued on: 02/16/1999
Inventor: Saitoh

Latch type sense amplifier having a negative feedback device
Patent #: 5883846
Issued on: 03/16/1999
Inventor: Lee

Buffer circuit, memory device, and integrated circuit for receiving digital signals Patent #: 6044036
Issued on: 03/28/2000
Inventor: Flannagan, et al.

Inventors

Assignee

Application

No. 10429149 filed on 05/02/2003

US Classes:

365/207, Differential sensing365/208, Semiconductors365/230.08, Including particular address buffer or latch circuit arrangement365/205Flip-flop used for sensing

Examiners

Primary: Elms, Richard

Attorney, Agent or Firm

Foreign Patent References

  • 41 05 268 DE 06/01/1992
  • 199 61 518 DE 07/01/2001
  • 100 22 263 DE 11/01/2001
  • 100 23 362 DE 11/01/2001
  • 0 748 042 EP 12/01/1996
  • 0 827 151 EP 03/01/1998
  • 03-016092 JP 01/01/1991
  • 04-032096 JP 02/01/1992
  • 09-223957 JP 08/01/1997
  • 10-031893 JP 02/01/1998
  • 10-289586 JP 10/01/1998

International Classes

G11C 7/02
G11C 7/00

Abstract

A differential current evaluation circuit has a differential amplifier and a circuit for setting an input resistance of the current evaluation circuit. The circuit is connected to the outputs and the inputs of the differential amplifier and to signal lines. A sense amplifier circuit has a circuit section, in which a signal is available at an output in a temporally continuous manner even if, after the deactivation of the circuit connected upstream, a signal, in particular a signal supplied by the current evaluation circuit, is no longer present at its input. The differential current evaluation circuit and the sense amplifier circuit are disposed in a circuit configuration for reading out and evaluating a memory state of a semiconductor memory cell. The current evaluation circuit can be activated by a circuit section for automatic deactivation before a read operation and be automatically deactivated directly after the read operation has ended.

Other References

  • H. Klar: “Integrierte Digitale Schaltungen MOS/BICOMS” [integrated digital circuits MOS/BICMOS], Springer Verlag Berlin, 2nd , Ed. 1996, pp. 178-183.
  • Nobutaro Shibata: “Current Sense Amplifiers for Low-Voltage Memories”, IEICE Trans. Electron., vol. E79-C, No. 8, Aug. 1996, pp. 1120-1130.
  • Borivoje Nikolic et al.: “Improved Sense-Amplifier-Based Flip-Flop: Design and Measurements”, IEEE Journal of Solid-State Circuits, vol. 35, No. 6, Jun. 2000, pp. 876-884.
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