Uniform color phosphor-coated light-emitting diode
Patent 7084434 Issued on August 1, 2006. Estimated Expiration Date: November 26, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
257/98, With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package257/79, INCOHERENT LIGHT EMITTER STRUCTURE257/100, Encapsulated257/103, With particular semiconductor material438/29, Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)340/438Internal alarm or indicator responsive to a condition of the vehicle
Light-emitting devices, and related components, systems and methods are disclosed.
Other References
W.S. Wong et al. “Damage-free separation of GaN thin films from sapphire substrates”, Appl. Phys. Lett. 72 (5), Feb. 2, 1998, pp. 599-601.
M.K. Kelly et al. “Optical process for liftoff of Group III-nitride films”, Physica Status Solidi; Rapid Research Note, Nov. 28, 1996, 2 pages.
A. A. Erchak et al. “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode”, Appl. Phys. Lett. (78 (5), Jan. 29, 2001, pp. 563-565.
P.L. Gourley et al. “Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors”, Appl. Phys. Lett 64(6), Feb. 7, 1994, pp. 687-689.
P.L. Gourley et al. “Optical Bloch waves in a semiconductor photonic lattice”, Appl. Phys. Lett. 60 (22), Jun. 1, 1992, pp. 2714-2716.
J.R. Wendt et al. “Nanofabrication of photonic lattice structures in GaAs/AIGaAs”, J. Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2637-2640.
M. Krames et al “Introduction to the Issue on High-Efficiency Light-Emitting Diodes”, IEEE Journal on selected topic in quantum electronics, vol. 8, No. 2 Mar./Apr. 2002, pp. 185-188.
K. Streubel et al., “High Brightness AlGaInP Light-Emitting Diodes”, IEEE Journal on selected topic in quantum electronics, vol. 8, No. 2, Mar./Apr. 2002, pp. 321-332.
M. Okai et al. “Novel method to fabricate corrugation for a λ/4-shifted distributed feedback laser using a granting photomask”, Appl. Phys. Lett. 55(5), Jul. 31, 1989, pp. 415-417.
T.L. Koch et al. “1.55-μ InGaAsP distributed feedack vapor phase transported buried heterostructure lasers”, Appl. Phys. Lett. 47 (1), Jul. 1, 1985, pp. 12-14.
W.T. Tsang et al. “Semiconductor distributed feedback lasers with quantum well or superlattice grating for index or gain-coupled optical feedback”, Appl. Phys. Lett. 60 (21), May 25, 1992, pp. 258-2582.
M. Zelsmann et al. “Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator”, Appl. Phys. Lett. 83 (13), Sep. 29, 2003, pp. 2542-2544.
M. Rattier et al. “Omnidirectional and compact guided light extraction from Archimedean photonic lattices”, Appl. Phys. Lett. 83 (7), Aug. 18, 2003, pp. 1283-1285.
Y.-J. Lee et al. “A high-extraction-efficiency nanopatterned organic light-emitting diode”, Appl. Phys. Lett. 82(21), May 26, 2003, pp. 3779-3781.
I. Schnitzer et al. “30% external quantum efficiency from surface textured, thin-film light-emitting diodes”, Appl. Phys. Lett. 63 (18), Oct. 18, 1993, pp. 2174-2176.
M. Boroditsky et al. “Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals”, Appl. Phys. Lett. 75 (8), Aug. 23, 1999, pp. 1036-1038.
L. Chen et al. “Fabrication of 5-100 nm Patterned InGaN Blue Light Emitting Heterostructures”, Phys. Stat. Sol. (a), 188 (I), 2001, pages 135-138.
I. Bulu et al. “Highly directive radiation from sources embedded inside photonic crystals”, Appl. Phys. Lett. 83 (16), Oct. 20, 2003, pp. 3263-3265.
T. N. Oder et al. “III-nitride photonic crystals”, Appl. Phys. Lett. 83 (6), Aug. 11, 2003, pp. 1231-1233.
M.K. Kelly et al. “Optical patterning of GaN films”, Appl. Phys. Lett 68 (12), Sep. 16, 1996, pp. 1749-1751.
Wendt et al. “Nanofabrication of photonic lattice structures in GaAs/AIGaAs,” J. Vac. Sci. Technol. B 11 (6), Nov./Dec. 1993, pp. 2637-2640.
Gourley et al. “Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors,” Appl. Phys. Lett. 64 (6), Feb. 7, 1994, pp. 687-689.
A. Köck et al., “Novel surface emitting GaAs/AlGaAs laser diodes based on surface mode emission,” Appl. Phys. Lett. 63 (9), Aug. 30, 1993, pp. 1164-1166.
A. Köck et al., “Strongly directional emission from AlGaAs/GaAs light-emitting diodes,” Appl. Phys. Lett. 57 (22), Nov. 26, 1990, pp. 2327-2329.