Method of depositing a metal seed layer on semiconductor substrates
Patent 7074714 Issued on July 11, 2006. Estimated Expiration Date: November 3, 2024. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
438/637, With formation of opening (i.e., viahole) in insulative layer438/629, Diverse conductive layers limited to viahole/plug315/267, Electromagnetic influenced discharge device load204/192.23, Silicon containing361/230, ELECTRIC CHARGE GENERATING OR CONDUCTING MEANS (E.G., CHARGING OF GASES)315/111.51, Induction type315/111.81, Electron or ion source118/719, Multizone chamber204/192.17, Electrical contact material204/298.06, Triode, tetrode, auxiliary electrode or biased workpiece204/192.3, With sputter etching315/111.21, Plasma generating204/192.15, Specified deposition material or use204/192.12, Glow discharge sputter deposition (e.g., cathode sputtering, etc.)29/25.01, BARRIER LAYER OR SEMICONDUCTOR DEVICE MAKING315/111.41, With magnetic field257/740, With means to prevent contact from penetrating shallow PN junction (e.g., prevention of aluminum "spiking")257/767, Resistive to electromigration or diffusion of the contact or lead material204/192.13, Measuring or testing (e.g., of operating parameters, property of article, etc.)257/751, At least one layer forms a diffusion barrier257/764, Alloy containing molybdenum, titanium, or tungsten257/773, Of specified configuration204/192.11, Ion beam sputter deposition438/643, At least one layer forms a diffusion barrier438/639, Having viahole with sidewall component428/138, Including nonapertured component257/774, Via (interconnection hole) shape438/632Utilizing reflow
We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.
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