U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Diamond-silicon carbide composite

Patent 7060641 Issued on June 13, 2006. Estimated Expiration Date: Icon_subject April 19, 2025. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3816085

Silicon carbide and silicon bonded polycrystalline diamond body and method of making it
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Issued on: 05/01/1979
Inventor: Lee ,   et al.

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Patent #: 4231195
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Inventor: DeVries ,   et al.

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Issued on: 10/17/1989
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Issued on: 08/14/1990
Inventor: Ringwood

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Patent #: 4985051
Issued on: 01/15/1991
Inventor: Ringwood

Production of diamond compacts consisting essentially of diamond crystals bonded by silicon carbide Patent #: 5010043
Issued on: 04/23/1991
Inventor: Ringwood

Inventors

Assignee

Application

No. 11110252 filed on 04/19/2005

US Classes:

501/90, And carbonaceous material51/307, WITH INORGANIC MATERIAL51/293, MISCELLANEOUS51/308, Clay, silica, or silicate51/309Metal or metal oxide

Examiners

Primary: Group, Karl

Attorney, Agent or Firm

Foreign Patent References

  • 56-9276 JP 01/01/1981
  • 2000-203955 JP 07/01/2000
  • 8601433 WO 03/01/1986
  • 8807409 WO 10/01/1988

International Class

C04B 35/577

Abstract

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa·m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Other References

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