Method of manufacturing a semiconductor device

Patent 7052943 Issued on May 30, 2006. Estimated Expiration Date:

March 15, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

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Inventors

Assignee

Semiconductor Energy Laboratory Co., Ltd.

Application

No. 10097641 filed on 03/15/2002

US Classes:

438/166, Including recrystallization step438/476, By layers which are coated, contacted, or diffused438/150, Specified crystallographic orientation438/164, Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)438/770Oxidation

Examiners

Primary: Booth, Richard A.

Attorney, Agent or Firm

Foreign Patent References

0 651 431 EP 05/01/1995
05-109737 JP 04/01/1993
06-151414 JP 05/01/1994
07-130652 JP 05/01/1995
07-183540 JP 07/01/1995
08-78329 JP 03/01/1996
09-074207 JP 03/01/1997
10-055951 JP 02/01/1998
3032801 JP 09/01/1998
2000-105081 JP 04/01/2000
2000-260777 JP 09/01/2000
2001-210828 JP 08/01/2001
2001-267264 JP 09/01/2001

International Class

H01L 21/84

Abstract

A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal element remaining in the film is provided. A first semiconductor film (104) having a crystal structure is formed on a substrate. A barrier layer (105) and a second semiconductor film (106) containing a rare gas element are formed on the first semiconductor film (104). A metal element contained in the first semiconductor film (104) is moved to the second semiconductor film (106) through the barrier layer (105) by heat treatment for gettering.

Other References

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