Nonvolatile memory device using semiconductor nanocrystals and method of forming same
Patent 7045851 Issued on May 16, 2006. Estimated Expiration Date: June 20, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
257/315, With floating gate electrode257/316, With additional contacted control electrode257/17, With particular barrier dimension438/257, Having additional gate electrode surrounded by dielectric (i.e., floating gate)365/151, Molecular or atomic257/261, Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure)423/348, Elemental silicon257/317With irregularities on electrode to facilitate charging or discharging of floating electrode
A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.
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June 20, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
