Gallium nitride based compound semiconductor light-emitting device
Patent 6992331 Issued on January 31, 2006. Estimated Expiration Date: 
November 5, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 5, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsAssigneeApplicationNo. 10700536 filed on 11/05/2003US Classes:257/79, INCOHERENT LIGHT EMITTER STRUCTURE257/94, With heterojunction257/102, With particular dopant material (e.g., zinc as dopant in GaAs)438/46, Compound semiconductor438/22, MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL257/103With particular semiconductor materialExaminersPrimary: Nguyen, Tan T.Attorney, Agent or FirmInternational ClassH01L 27/15AbstractDisclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layer is formed over a multi-layer epitaxial structure,wherein the light extraction layer is a light transmissible impurity doped metal oxide and the adaptive layer is a Ni/Au layer used to enhance ohmic contact between the light extraction layer and the multi-layer epitaxial structure. | |
