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US Patent 6963060 - Photo-sensor array for motion detection

US Patent Issued on November 8, 2005
Estimated Patent Expiration Date: Icon_subject February 4, 2025Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
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Abstract

Pixels in an array of image sensor pixels contain photo-sensors and circuits having inputs connected to the photosensors. The circuits have feedback loops for reducing fixed pattern noise in the array. Output from each pixel is used to latch a multibit counter value supplied by a global counter. Each feedback loop preferably includes a pair of alternately-toggling switching transistors to minimize unwanted charge injection. An image sensor according to the invention can be used for, e.g., motion sensing.

Other References

  • Xavier Arreguit et al., “A CMOS Motion Detector System for Pointing Devices,” ISSCC96 Array Processors ad Image Based Sensors, Paper TP/64.
  • Xavier Arreguit et al., “A CMOS Motion Detector System for Pointing Devices,” IEEE J. of Solid State Circuits, vol. 31, No. 12, pp. 1916-1921, Dec. 1996.
  • Rafael Dominguez-Castro et al., “A 0.8 μm CMOS Two-Dimensional Programmable Mixed-Signal Focal-Plane Array Processor with On-Chip Binary Imaging and Instructions Storage,” IEEE J. of Solid State Circuits, vol. 32, No. 7, pp. 1013-1026, Jul. 1997.
  • Stuart Kleinfelder et al., “A 10 000 Frames/s CMOS Digital Pixel Sensor,” IEEE J. of Solid State Circuits, vol. 36, No. 12, pp. 2049-2059, Dec. 2001.
  • Nicolo Mamaresi et al., “A CMOS-Only Micro Touch Pointer,” J. of Solid State Circuits, vol. 34, No. 12, pp. 1860-1868, Dec. 1999.
  • O. Schrey et al., “A Locally Adaptive CMOS Image Sensor with 90dB Dynamic Range,” IEEE Int'l Solid State Circuits Conference, WA-17.6 (1999).
  • G. Torelli et al., “Analog-to-Digital Conversion Architectures for Intelligent Optical Sensor Arrays,” SPIE vol. 2950, pp. 254-264 (Aug. 1996).
  • David Yang et al., “A 640×512 CMOS Image Sensor with Ultra Wide Dynamic Range Floating-Point Pixel-Level ADC,” Session No. 17, Nov. 1, 1998.
  • David Yang et al., “A 640×512 CMOS Image Sensor with Ultra Wide Dynamic Range Floating-Point Pixel-Level ADC,” IEEE J. Solid State Circuits, vol. 34, No. 12, Dec. 1999.
  • David Yang et al., “A Nyquist-Rate Pixel-Level ADC for CMOS Image Sensors,” IEEE J. Solid State Circuits, vol. 34, No. 3, Mar. 1999.

Inventors

Assignee

Application

No. 11049985 filed on 02/04/2005

US Classes:

250/208.1, Plural photosensitive image detecting element arrays250/214.1, Special photocell250/214R, Special photocell or electron tube circuits382/312, IMAGE SENSING382/313, Hand-held348/310, With diode in series with photocell341/155, Analog to digital conversion348/308, Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)348/297, Accumulation or integration time responsive to light or signal intensity348/301Pixel amplifiers

Field of Search

250/208.1, Plural photosensitive image detecting element arrays250/214.1, Special photocell250/214R, Special photocell or electron tube circuits348/302, X - Y architecture348/307, Photosensitive switching transistors or "static induction" transistors348/308, Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)348/309, Exclusively passive light responsive elements in the matrix348/310, With diode in series with photocell341/155, Analog to digital conversion382/312, IMAGE SENSING382/313Hand-held

Examiners

Primary: Porta, David P.
Assistant: Monbleau, Davienne

Attorney, Agent or Firm

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Inventor: McIlrath
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Inventor: Fowler

International Class

H01L027/00

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