Solid-state imaging device with dynamic range control
December 28, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSolid state image-pickup device with expanded dynamic range Solid-state image pickup device and manufacturing method of the same Color video camera with a solid state image sensing device Solid-state imaging apparatus Image sensor array with picture element sensor testability Line-of-sight detecting device and apparatus including the same Driving method for driving a solid state image pick-up device Method of controlling a solid-state image sensing device and image sensing apparatus adopting the method Image pickup unit having reduced signaling lines Imaging system and method for increasing the dynamic range of an array of active pixel sensor cells InventorsApplicationNo. 09749763 filed on 12/28/2000US Classes:348/304, With charge transfer type selecting register348/308, Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)257/233, Sensors not overlaid by electrode (e.g., photodiodes)348/266, With single image scanning device supplying plural color signals348/296, Electronic shuttering250/208.1, Plural photosensitive image detecting element arrays396/51, EYE TRACKING348/241, Including noise or undesired signal reduction348/312, With timing pulse generator348/311, Charge-coupled architecture348/302, X - Y architecture348/249, In charge coupled type sensor341/162, Serial conversions with change in signal348/299, With overflow gate or drain348/301, Pixel amplifiers702/85CALIBRATION OR CORRECTION SYSTEMExaminersPrimary: Garber, Wendy R.Assistant: Hernandez, Nelson D. Attorney, Agent or FirmForeign Patent References
International ClassesH04N003/14H04N005/335 H04N005/335 AbstractA solid-state imaging device includes unit cells, arranged in a matrix of rows and columns, each having a photodiode for photoelectrically converting incident light to store signal charges, a readout transistor Td for reading out the signal charges and amplifying transistor Tb for amplifying signals readout at a detection node, a plurality of vertical shift registers for generating signal charge readout pulses ESi, DRi, ROi and a voltage switching circuit for setting a voltage VDR of the readout pulse DRi for dynamic range control lower than voltages of both a readout pulse ESi for an electronic shutter and a usual readout pulse ROi. The solid-state imaging device provides excellent images without clipping from a small signal region to large signal region.Field of SearchIncluding switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)Time delay and integration mode (TDI) Electronic shuttering With timing pulse generator Accumulation or integration time responsive to light or signal intensity With charge transfer type selecting register X - Y architecture Charge-coupled architecture Pixel amplifiers Solid-state image sensor In charge coupled type image sensor | |
