Organic thin film transistor with polymeric interface
Patent 6946676 Issued on September 20, 2005. Estimated Expiration Date: November 5, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
257/40, ORGANIC SEMICONDUCTOR MATERIAL257/411, Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)438/82, Having organic semiconductor component438/99, HAVING ORGANIC SEMICONDUCTIVE COMPONENT438/216, Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound428/447, As siloxane, silicone or silane430/160Polymer containing subbing layer
Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.
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