Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
Patent 6919168 Issued on July 19, 2005. Estimated Expiration Date: January 24, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
430/318, Metal etched430/311, Making electrical device430/313, With formation of resist image, and etching of substrate or material deposition430/316, Multiple etching of substrate430/317, Insulative or nonmetallic dielectric etched438/653, At least one layer forms a diffusion barrier216/67, Using plasma216/75, Substrate contains elemental metal, alloy thereof, or metal compound430/256, STRIPPING PROCESS OR ELEMENT438/336, Combined with vertical bipolar transistor427/539, Oxygen containing atmosphere216/41, MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST)257/295, With ferroelectric material layer29/852, By forming conductive walled aperture in base438/3, HAVING MAGNETIC OR FERROELECTRIC COMPONENT430/314, Etching of substrate and material deposition438/240, Having high dielectric constant insulator (e.g., Ta2O5, etc.)430/5, Radiation mask438/706, Vapor phase etching (i.e., dry etching)438/694, Combined with coating step204/192.33Measuring or testing (e.g., of operating parameters, end point determination, etc.)
A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.
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January 24, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
