Ceramic material resistant to halogen plasma and member utilizing the same
July 17, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3588573 3649864 Ceramic composition for dielectric in multilayer capacitors Discharge lamp having a yttrium aluminum garnet discharge envelope Lead magnesium niobate ceramic dielectrics having low sintering temperatures Corrosion-resistant member for chemical apparatus using halogen series corrosive gas High-pressure discharge lamp High-pressure discharge lamp with ceramic discharge vessel and ceramic sealing means having lead-through comprising thin wires having a thermal coefficient of expansion substantially less than that of the ceramic sealing means Method for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability High-pressure discharge lamp, method of its manufacture, and sealing material used with the method and the resulting lamp InventorsAssigneeApplicationNo. 10198675 filed on 07/17/2002US Classes:428/697, Layer contains compound(s) of plural metals428/304.4, Composite having voids in a component (e.g., porous, cellular, etc.)428/332, Physical dimension specified428/446, Of silicon containing (not as silicon alloy)428/699, Next to second metal-compound-containing layer428/701, O-containing metal compound428/702, O-containing501/152, Yttrium, lanthanide, actinide, or transactinide containing (i.e., atomic numbers 39 or 57-71 or 89+)501/153, Aluminum compound containing313/622, Discharge device with diverse electrodes501/135, Alkaline earth or magnesium containing313/636, Envelope composition501/136, Titanate containing219/385, Combined with container, enclosure, or support for material to be heated313/623, Having electrode lead-in or electrode support sealed to envelope313/285, Supporting wire, rod, or tube supported by envelope216/67, Using plasma445/26, Arc tube making, e.g., fluorescent lamp315/248, Induction-type discharge device load428/696Halogen-containingExaminersPrimary: Stein, StephenAttorney, Agent or FirmForeign Patent References
International ClassesB32B009/00C04B035/505 AbstractA member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BCl3 or Cl2 is formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and/or Si, for example, 3Y2O3.5Al2O3, 2Y2O3.Al2O3, Y2O3.Al2O3 or disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 μm or less in center line average roughness Ra is utilized.Other References
Field of SearchYttrium, lanthanide, actinide, or transactinide containing (i.e., atomic numbers 39 or 57-71 or 89+)Aluminum compound containing Silicon compound containing Metal-compound-containing layer Layer contains compound(s) of plural metals Next to second metal-compound-containing layer O-containing metal compound O-containing Physical dimension specified | |
