Sensing circuit
June 25, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCharge-integrating preamplifier for ferroelectric memory Semiconductor memory device Column amplifier for high fixed pattern noise reduction Nonvolatile ferroelectric memory device and method for driving same Charge amplifier for MOS imaging array Integrated memory having memory cells with magnetoresistive storage effect Ferroelectric memory and method for reading the same Patent #: 6522568 InventorAssigneeApplicationNo. 10602739 filed on 06/25/2003US Classes:365/207, Differential sensing365/189.09, Including reference or bias voltage generator348/294, Solid-state image sensor365/145, Ferroelectric348/301, Pixel amplifiers365/158MagnetoresistiveExaminersPrimary: Le, Vu A.Attorney, Agent or FirmForeign Patent References
International ClassG11C007/00AbstractA sensing circuit comprises a charge integrating sense amplifier 4 serially coupled to a discriminator 6. The sensing circuit can be used to sense the logic status of the cells in a random access memory (RAM) system, including ferroelectric RAMs. The use of a charge integrating sense amplifier enables the effect of bit line capacitance intrinsic to RAM circuits to be overcome and also provides efficient charge to voltage conversion gain. | |
