Patent ReferencesMethod of making silicon capacitive pressure sensor with glass layer between silicon wafers Sensor device Laminated semiconductor sensor with vibrating element Opto-electro-mechanical device or filter, process for making, and sensors made therefrom 5808210 High temperature resonant integrated microstructure sensor Resonant sensor and method of making a pressure sensor comprising a resonant beam structure Pressure sensor assembly with direct backside sensing Fiber-optic vibration sensor based on frequency modulation of light-excited oscillators Partial-pressure sensor Patent #: 6324897 InventorsAssigneeApplicationNo. 10036629 filed on 12/21/2001US Classes:356/480Resonant cavityExaminersPrimary: Smith, Zandra V.Assistant: Lee, Andrew H. Attorney, Agent or FirmInternational ClassG01B009/02AbstractA pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected. | |