BICMOS technology on SIMOX wafers
Patent 6888221 Issued on May 3, 2005. Estimated Expiration Date: 
April 14, 2024. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 14, 2024. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesComplementary bipolar transistor structure and method for manufacture 5118634 Semiconductor device having bipolar transistor free from leakage current across thin base region Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension Structure for reduction of base and emitter resistance and related method Bipolar transistor and manufacturing method thereof Patent #: 6521974 InventorsApplicationNo. 10709114 filed on 04/14/2004US Classes:257/565, BIPOLAR TRANSISTOR STRUCTURE257/592, With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))438/205, Plural bipolar transistors of differing electrical characteristics438/313, Complementary bipolar transistors438/340Making plural bipolar transistors of differing electrical characteristicsExaminersPrimary: Abraham, FetsumAttorney, Agent or FirmInternational ClassH01L027/082AbstractA method and structure for a bipolar transistor comprising a patterned isolation region formed below an upper surface of a semiconductor substrate and a single crystal extrinsic base formed on an upper surface of the isolation region. The single crystal extrinsic base comprises a portion of the semiconductor substrate located between the upper surface of the isolation region and the upper surface of the semiconductor substrate. The bipolar transistor further comprises a single crystal intrinsic base, wherein a portion of the single crystal extrinsic base merges with a portion of the single crystal intrinsic base. The isolation region electrically isolates the extrinsic base from a collector. The intrinsic and extrinsic bases separate the collector from an emitter. The extrinsic base comprises epitaxially-grown silicon. The isolation region comprises an insulator, which comprises oxide, and the isolation region comprises any of a shallow trench isolation region and a deep trench isolation region.Field of SearchComplementary transistors share common active region (e.g., integrated injection logic, I 2 L)Including lateral bipolar transistor structure With housing or contact structure or configuration More than two Darlington-connected transistors Complementary Darlington-connected transistors Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.) With resistance means connected between transistor base regions Plural non-isolated transistor structures in same structure BIPOLAR TRANSISTOR STRUCTURE Non-planar structure (e.g., mesa emitter, or having a groove to define resistor) With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base)) Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment) Full dielectric isolation with polycrystalline semiconductor substrate Plural bipolar transistors of differing electrical characteristics Complementary bipolar transistors Making plural bipolar transistors of differing electrical characteristics | |
