Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material

Patent 6875664 Issued on April 5, 2005. Estimated Expiration Date:

August 29, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Method of forming and aligning patterns in deposted overlaying on GaAs
Patent #: 5185293
Issued on: 02/09/1993
Inventor: Franke, et al.

Reduction of reflection by amorphous carbon
Patent #: 5656128
Issued on: 08/12/1997
Inventor: Hashimoto, et al.

Processing techniques for achieving production-worthy, low dielectric, low dielectric, low interconnect resistance and high performance IC
Patent #: 5679608
Issued on: 10/21/1997
Inventor: Cheung, et al.

Method of etching a substrate
Patent #: 5721090
Issued on: 02/24/1998
Inventor: Okamoto, et al.

Fabrication process using a thin resist
Patent #: 5759746
Issued on: 06/02/1998
Inventor: Azuma, et al.

Hard mask method for forming chlorine containing plasma etched layer
Patent #: 5981398
Issued on: 11/09/1999
Inventor: Tsai, et al.

Process for defining a pattern using an anti-reflective coating and structure therefor
Patent #: 6030541
Issued on: 02/29/2000
Inventor: Adkisson, et al.

Methods of forming void regions dielectric regions and capacitor constructions
Patent #: 6140200
Issued on: 10/31/2000
Inventor: Eldridge

Methods to modify wet by dry etched via profile
Patent #: 6277757
Issued on: 08/21/2001
Inventor: Lin

Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control
Patent #: 6350390
Issued on: 02/26/2002
Inventor: Liu, et al.

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Inventors

Assignee

Advanced Micro Devices, Inc.

Application

No. 10230794 filed on 08/29/2002

US Classes:

438/299, Self-aligned438/736Utilizing multilayered mask

Examiners

Primary: Pham, Long
Assistant: Farahani, Dana

Attorney, Agent or Firm

Foley & Lardner LLP

International Class

H01L021/336

Abstract

A method of forming an integrated circuit using an amorphous carbon hard mask involves providing an amorphous carbon material layer above a layer of conductive material and providing an anti-reflective coating (ARC) material layer above the amorphous carbon material. A transition region is formed intermediate the amorphous carbon material layer and the ARC material layer. The transition region has a concentration profile that provides a transition between the amorphous carbon material layer and the ARC material layer. A portion of the amorphous carbon material layer, the ARC material layer, and the transition region is removed to form a hard mask, and a feature is formed in the layer of conductive material according to the hard mask.

Other References

Wolf, S., Tauber, R. N., “Silicon Processing For the VLSI Era”, Lattice Press, Sunset Beach, CA; 1986; pp. 322, 384-385, 556-557.
U.S. Appl. No. 10/277,760, entitled “Sacrificial Air Gap Layer for Insulation of Metals”, as filed on Aug. 8, 2002, including claims, drawings, and abstract (17 pages).
U.S. Appl. No. 10/244,650, entitled “Use of Multilayer Amorphous Carbon Arc Stack to Eliminate Line Warpage Phenomenon”, as filed on Sep. 16, 2002, including claims, drawings, and abstract (30 pages).
U.S. Appl. No. 10/217,730, entitled “Ion Implantation to Modulate Amorphous Carbon Stress”, as filed on Aug. 13, 2002, including claims, drawings, and abstract (29 pages).
U.S. Appl. No. 10/424,420, entitled “Use of Amorphous Carbon for Gate Patterning”, filed Apr. 28, 2003, by Fisher et al.
U.S. Appl. No. 10/230,775, entitled “Use of Buffer Dielectric Layer with Amorphous Carbon Mask to Reduce Line Warpage”, as filed on Aug. 29, 2002, including claims, drawings, and abstract (28 pages).
U.S. Appl. No. 10/335,726, entitled “Use of Diamond as a Hard Mask Material”, as filed on Jan. 2, 2003, including claims, drawings, and abstract (26 pages).
U.S. Appl. No. 10/424,675, entitled “Selective Stress-Inducing Implant and Resulting Pattern Distortion in Amorphous Carbon Patterning”, as filed on Apr. 28, 2003, including claims, drawings, and abstract (28 pages).
U.S. Appl. No. 10/445,129, entitled “Modified Film Stack and Patterning Strategy for Stress Compensation and Prevention of Pattern Distortion in Amorphous Carbon Gate Patterning”, as filed on May 20, 2003, including claims, drawings, and abstract (29 pages).
U.S. Appl. No. 10/215,173, entitled “Use of Amorphous Carbon Hand Mask for Gate Patterning to Eliminate Requirement of Poly Re-Oxidation”, as filed Aug. 8, 2002, including claims, drawings, and abstract (29 pages).