SMT-type structure of the silicon-based electret condenser microphone

Patent 6870939 Issued on March 22, 2005. Estimated Expiration Date:

November 28, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

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Inventors

Application

No. 09994687 filed on 11/28/2001

US Classes:

381/175, Semiconductor junction microphone381/191, Having electrostatic element (e.g., electret, vibrating plate)307/400, ELECTRETS367/170Electret

Examiners

Primary: Kuntz, Curtis
Assistant: Ensey, Brian

Attorney, Agent or Firm

Bacon & Thomas, PLLC.

Foreign Patent References

2002081740 KR 04/01/2001

International Class

H04R025/00

Abstract

This invention mainly provides a SMT-type structure of the minimized and low-power silicon-based electret condenser microphone. Primarily integrates with the electret, silicon-based, MEMS and microphone techniques to implement the minimized and low-power silicon-based electret condenser microphone. The Silicon-based bi-diaphragm of the composite diaphragm-chip was coated with the low-dielectric macromolecule material to allow the microphone acquires the sufficient electrical charges. Moreover, the impedance matching element of the microphone that MOSFET was implemented by the MEMS technology. Conclusively, this silicon-based electret condenser microphone gains several achievements as the smallest volume, a lower bias voltage, a SMT-type structure, a lower residue stress and a lower assembly cost.