Method for capping copper in semiconductor devices
Self-aligned ion implanted transition metal contact diffusion barrier apparatus
Low cost solution to high aspect ratio contact/via adhesion layer application for deep sub-half micrometer back-end-of line technology
Layer forming material and wiring forming method
Retardation layer for preventing diffusion of metal layer and fabrication method thereof
Method for selective growth of Cu3Ge or Cu5Si for passivation of damascene copper structures and device manufactured thereby
Self-aligned copper silicide formation for improved adhesion/electromigration
Plasma treatment to enhance inorganic dielectric adhesion to copper
Copper interconnect with improved electromigration resistance
Low dielectric constant materials for copper damascene
ApplicationNo. 10609889 filed on 06/30/2003
US Classes:438/630Silicide formation
ExaminersPrimary: Quach, T. N.
Attorney, Agent or Firm
Foreign Patent References
AbstractA silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film, converts the exposed Cu surfaces of a Cu interconnect structure, to copper silicide. The copper silicide suppresses Cu diffusion and electromigration and serves as a barrier material in regions where contact to further conductive material is made. An entire copper surface of a copper interconnect structure may be silicided or a local portion of the surface silicided after an opening is formed in an overlying dielectric to expose a portion of the copper surface.