Sputtered spring films with low stress anisotropy
Patent 6866255 Issued on March 15, 2005. Estimated Expiration Date: 
April 12, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 12, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3842189 Beam lead formation method Semiconductor device comprising projecting contact layers Thin-film electrothermal device Composite leaf spring Resin packaged semiconductor device having a protective layer made of a metal-organic matter compound Selectively releasing conductive runner and substrate assembly Microfabricated cantilever stylus with integrated pyramidal tip Semiconductor chip assemblies and components with pressure contact Sensor head for use in atomic force microscopy and method for its production InventorsAssigneeApplicationNo. 10121644 filed on 04/12/2002US Classes:267/37.1, And covering438/117, Incorporating resilient component (e.g., spring, etc.)438/652, Plural layered electrode or conductor257/181With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)ExaminersPrimary: Siconolfi, Robert A.Assistant: Kramer, Devon Attorney, Agent or FirmForeign Patent References
International ClassesB60G011/02F16F001/24 AbstractMethods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material compositions. In one embodiment, isotropic internal stress is achieved by manipulating the fabrication parameters (i.e., temperature, pressure, and electrical bias) during spring material film information to generate the tensile or compressive stress at the saturation point of the spring material. Methods are also disclosed for tuning the saturation point through the use of high temperature or the incorporation of softening metals. In other embodiments, isotropic internal stress is generated through randomized deposition (e.g., pressure homogenization) or directed deposition techniques (e.g., biased sputtering, pulse sputtering, or long throw sputtering). Cluster tools are used to separate the deposition of release and spring materials.Other References
Field of SearchLeafLeaf spring And covering Spiral or elastic covering Incorporating resilient component (e.g., spring, etc.) Plural layered electrode or conductor At least one layer forms a diffusion barrier Having adhesion promoting layer Silicide Specified configuration of electrode or contact Having electrically conductive polysilicon component With means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor) With malleable electrode (e.g., silver electrode layer) With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring) Conductor or circuit manufacturing Assembling to base an electrical component, e.g., capacitor, etc. | |
