CMOS active pixel sensor with a sample and hold circuit having multiple injection capacitors and a fully differential charge mode linear synthesizer with skew control
August 13, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCharge-to-digital converter CMOS active pixel sensor type imaging system on a chip CMOS image sensor with improved fill factor DC offset and gain correction for CMOS image sensor Charge-domain analog readout for an image sensor Variable collection of blooming charge to extend dynamic range CMOS image sensor with reduced fixed pattern noise Patent #: 6320616 InventorApplicationNo. 10216803 filed on 08/13/2002US Classes:250/208.1, Plural photosensitive image detecting element arrays348/241, Including noise or undesired signal reduction348/250In charge coupled type sensorExaminersPrimary: Allen, Stephone B.Attorney, Agent or FirmInternational ClassesH01L027/00H04N005/217 AbstractAn CMOS active pixel sensor (APS) imaging system include circuitry to compensate for different analog offset levels from the CMOS pixel array. More specifically, the compensation is performed in the analog (charge) domain. A digital correction value, which may be measured as part of the operation or testing of the CMOS APS system, is provided to a offset correction block circuit, to generate an analog electrical signal. The analog electrical signal is supplied to a sample-and-hold circuit including a charge amplifier. The signal read from the pixel array, after conditioning through an analog signal chain, is also supplied to the charge amplifier, which has a linear transfer function and outputs the compensated signal.Field of SearchPlural photosensitive image detecting element arraysIncluding noise or undesired signal reduction In charge coupled type sensor Solid-state image sensor X - Y architecture Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor) Exclusively passive light responsive elements in the matrix With diode in series with photocell Charge-coupled architecture With timing pulse generator Including details of sampling or holding Sample and hold | |
