U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Polycrystalline silicon and process and apparatus for producing the same

Patent 6861144 Issued on March 1, 2005. Estimated Expiration Date: Icon_subject May 9, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Process for producing liquid silicon
Patent #: 4176166
Issued on: 11/27/1979
Inventor: Carman

Method of making magnetic bubble memory device by implanting hydrogen ions and annealing
Patent #: 4460412
Issued on: 07/17/1984
Inventor: Imura ,   et al.

Deposition of silicon at temperatures above its melting point
Patent #: 4547258
Issued on: 10/15/1985
Inventor: Witter ,   et al.

Deposition of silicon at temperatures above its melting point
Patent #: 4710260
Issued on: 12/01/1987
Inventor: Witter ,   et al.

Apparatus for making molten silicon
Patent #: 4737348
Issued on: 04/12/1988
Inventor: Levin

Aerosol reactor production of uniform submicron powders
Patent #: 4994107
Issued on: 02/19/1991
Inventor: Flagan, et al.

Material comprising silicon and process for its manufacture
Patent #: 5164138
Issued on: 11/17/1992
Inventor: Dietl, et al.

Fluidized bed reactor heated by microwaves
Patent #: 5382412
Issued on: 01/17/1995
Inventor: Kim, et al.

Polycrystalline silicon substrate having a thermally-treated surface, and process of making the same
Patent #: 5469200
Issued on: 11/21/1995
Inventor: Terai

Strontium doping of molten silicon for use in crystal growing process Patent #: 6350312
Issued on: 02/26/2002
Inventor: Phillips, et al.

Inventors

Assignee

Application

No. 10030657 filed on 05/09/2001

US Classes:

428/402, Particulate matter (e.g., sphere, flake, etc.)117/204, With means for treating single-crystal (e.g., heat treating)117/205, For forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)117/902, SPECIFIED ORIENTATION, SHAPE, CRYSTALLOGRAPHY, OR SIZE OF SEED OR SUBSTRATE117/935, Silicon from vapor or gaseous state {C30B 29/06}423/348Elemental silicon

Examiners

Primary: Le, H. Thi

Attorney, Agent or Firm

Foreign Patent References

  • 51-37819 JP 03/01/1976
  • 52-133085 JP 11/01/1977
  • 54-124896 JP 09/01/1979
  • 56-63813 JP 05/01/1981
  • 59-501109 JP 06/01/1984
  • 59-121109 JP 07/01/1984
  • 59-162117 JP 09/01/1984
  • 62-7619 JP 01/01/1987
  • 10-33969 JP 02/01/1998
  • 10-273310 JP 10/01/1998
  • 11-314996 JP 11/01/1999

International Class

B32B005/16

Abstract

Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed polycrystalline silicon. There is further provided a polycrystalline silicon production apparatus in which the deposition and melting of silicon are carried out on the inner surface of a cylindrical vessel, a chlorosilane feed pipe is inserted into the cylindrical vessel to a silicon molten liquid, and seal gas is supplied into a space between the cylindrical vessel and the chlorosilane feed pipe.

Other References

  • Giovanni Sotgiu et al.; Thin Solid Films, vol. 297, No. 1-2, Apr. 1, 1997, pp. 18-21.
  • G.F. Cerofolini et al.; Materials Science and Engineering, vol. 27, No. 1-2, Apr. 2000. pp. 1-52.
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