Multiple channel electron beam optical column lithography system and method of operation
Charged particle beam exposure system using line beams
Partitioning method for E-beam lithography
Charged particle beam exposure system and method
Dose modification proximity effect compensation (PEC) technique for electron beam lithography
Electron beam exposure apparatus and method, and device manufacturing method
Method and apparatus for run-time correction of proximity effects in pattern generation
Charged particle beam writing method for determining optimal exposure dose prior to pattern drawing
Electron beam exposure apparatus and method of controlling same
ApplicationNo. 09708590 filed on 11/09/2000
US Classes:250/396R, WITH CHARGED PARTICLE BEAM DEFLECTION OR FOCUSSING250/492.21, Ion bombardment250/492.22, Pattern control250/491.1, MEANS TO ALIGN OR POSITION AN OBJECT RELATIVE TO A SOURCE OR DETECTOR250/398, With target means250/492.2, Irradiation of semiconductor devices430/30, INCLUDING CONTROL FEATURE RESPONSIVE TO A TEST OR MEASUREMENT250/397, With detector250/492.24, Photocathode projection250/492.23Variable beam
ExaminersPrimary: Lee, John D.
Assistant: Fernandez, Kalimah
Attorney, Agent or Firm
International ClassesG01T 100
AbstractA charged particle beam exposure system which draws a pattern on an object to be exposed by a plurality of charged particle beams emitted from a plurality of element electron optical systems includes (a) a storage device storing (i) a standard dose data for controlling the irradiation of charged particle beams to an object to be exposed, (ii) plural pieces of proximity effect correction data for correcting the irradiation of the charged particle beams for each incidence position with respect to the object to be exposed, in order to reduce the influence of a proximity effect, and (iii) calibration data for correcting variations in the irradiation dose among the plurality of the charged particle beams emitted from the plurality of element electron optical systems, and (b) a controller for controlling the irradiation of each of the charged particle beams, based on the standard dose data, the proximity effect correction data, and the calibration data.