Correcting method for correcting exposure data used for a charged particle beam exposure system
November 9, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMicrocircuit fabrication Multiple channel electron beam optical column lithography system and method of operation Charged particle beam exposure system using line beams Partitioning method for E-beam lithography Charged particle beam exposure system and method Dose modification proximity effect compensation (PEC) technique for electron beam lithography Electron beam exposure apparatus and method, and device manufacturing method Method and apparatus for run-time correction of proximity effects in pattern generation Charged particle beam writing method for determining optimal exposure dose prior to pattern drawing Electron beam exposure apparatus and method of controlling same InventorsAssigneeApplicationNo. 09708590 filed on 11/09/2000US Classes:250/396R, WITH CHARGED PARTICLE BEAM DEFLECTION OR FOCUSSING250/492.21, Ion bombardment250/492.22, Pattern control250/491.1, MEANS TO ALIGN OR POSITION AN OBJECT RELATIVE TO A SOURCE OR DETECTOR250/398, With target means250/492.2, Irradiation of semiconductor devices430/30, INCLUDING CONTROL FEATURE RESPONSIVE TO A TEST OR MEASUREMENT250/397, With detector250/492.24, Photocathode projection250/492.23Variable beamExaminersPrimary: Lee, John D.Assistant: Fernandez, Kalimah Attorney, Agent or FirmInternational ClassesG01T 100A61N 500 G21K 510 AbstractA charged particle beam exposure system which draws a pattern on an object to be exposed by a plurality of charged particle beams emitted from a plurality of element electron optical systems includes (a) a storage device storing (i) a standard dose data for controlling the irradiation of charged particle beams to an object to be exposed, (ii) plural pieces of proximity effect correction data for correcting the irradiation of the charged particle beams for each incidence position with respect to the object to be exposed, in order to reduce the influence of a proximity effect, and (iii) calibration data for correcting variations in the irradiation dose among the plurality of the charged particle beams emitted from the plurality of element electron optical systems, and (b) a controller for controlling the irradiation of each of the charged particle beams, based on the standard dose data, the proximity effect correction data, and the calibration data.Other References
|
| ||||||||||||||
