Patent ReferencesMemory circuit with improved data output control Disabling sense amplifier Multiplexing sense amplifier Synchronous output circuit Low-power read circuit and method for controlling a sense amplifier Circuit and method for setting the time duration of a write to a memory cell Power saving synchronization circuit and semiconductor storage device including the same Patent #: 5986967 InventorAssigneeApplicationNo. 10190917 filed on 07/08/2002US Classes:365/208, Semiconductors365/189.05, Having particular data buffer or latch365/203, Precharge365/196Sense/inhibitExaminersPrimary: Nguyen, Van ThuAssistant: Hur, J. H. Attorney, Agent or FirmInternational ClassesG11C 702G11C 710 G11C 712 AbstractA sense amplifier circuit for a memory cell includes a sense amplifier that is operable to be coupled to a memory cell via data lines, and including read bus complement and read bus true lines operative with a data output through which a data output signal is passed. An equalization circuit and enable circuit are operable with the sense amplifier. A control circuit is operable for disconnecting the data output from preferably the one of the read bus complement line and minimize unwanted transitions on the data output signal. | |