Patent ReferencesHigh speed CMOS sense amplifier MOS semiconductor device with memory cells each having storage capacitor and transfer transistor MRAM device including analog sense amplifiers Magnetic random access memory (MRAM) device including differential sense amplifiers Method for nondestructively reading memory cells of an MRAM memory Magneto-resistive memory having sense amplifier with offset control MRAM architectures for increased write selectivity Integrated memory having memory cells with magnetoresistive storage effect Device for evaluating cell resistances in a magnetoresistive memory MRAM without isolation devices InventorsApplicationNo. 10249876 filed on 05/14/2003US Classes:365/158, Magnetoresistive365/205, Flip-flop used for sensing365/207Differential sensingExaminersPrimary: Phan, TrongAttorney, Agent or FirmForeign Patent References
International ClassesG11C 1100G11C 700 G11C 702 AbstractA method for sensing data stored within a cross point magnetic random access memory (MRAM) device includes establishing an offset voltage of a sense amplifier, the sense amplifier selectively coupled to a selected bitline within the MRAM device, the selected bitline being in communication with an MRAM cell to be read. A read current is applied through the MRAM cell to be read, and a reference current is applied through the selected bitline. A signal voltage is sensed on the selected bitline, the signal voltage being generated in response to the read current and the reference current. The signal voltage is coupled to an input of the sense amplifier, wherein the sense amplifier provides an offset corrected output reflective of the data state of the MRAM cell.Other References
| |