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Capacitively coupled sensing apparatus and method for cross point magnetic random access memory devices

Patent 6816403 Issued on November 9, 2004. Estimated Expiration Date: Icon_subject May 14, 2023. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

High speed CMOS sense amplifier
Patent #: 4461965
Issued on: 07/24/1984
Inventor: Chin

MOS semiconductor device with memory cells each having storage capacitor and transfer transistor
Patent #: 5969998
Issued on: 10/19/1999
Inventor: Oowaki, et al.

MRAM device including analog sense amplifiers
Patent #: 6128239
Issued on: 10/03/2000
Inventor: Perner

Magnetic random access memory (MRAM) device including differential sense amplifiers
Patent #: 6185143
Issued on: 02/06/2001
Inventor: Perner, et al.

Method for nondestructively reading memory cells of an MRAM memory
Patent #: 6388917
Issued on: 05/14/2002
Inventor: Hoffmann, et al.

Magneto-resistive memory having sense amplifier with offset control
Patent #: 6396733
Issued on: 05/28/2002
Inventor: Lu, et al.

MRAM architectures for increased write selectivity
Patent #: 6424564
Issued on: 07/23/2002
Inventor: Li, et al.

Integrated memory having memory cells with magnetoresistive storage effect
Patent #: 6462979
Issued on: 10/08/2002
Inventor: Schlosser, et al.

Device for evaluating cell resistances in a magnetoresistive memory
Patent #: 6512688
Issued on: 01/28/2003
Inventor: Thewes, et al.

MRAM without isolation devices
Patent #: 6512689
Issued on: 01/28/2003
Inventor: Naji, et al.

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Inventors

Application

No. 10249876 filed on 05/14/2003

US Classes:

365/158, Magnetoresistive365/205, Flip-flop used for sensing365/207Differential sensing

Examiners

Primary: Phan, Trong

Attorney, Agent or Firm

Foreign Patent References

  • 2001358315 JP 11/01/2001

International Classes

G11C 1100
G11C 700
G11C 702

Abstract

A method for sensing data stored within a cross point magnetic random access memory (MRAM) device includes establishing an offset voltage of a sense amplifier, the sense amplifier selectively coupled to a selected bitline within the MRAM device, the selected bitline being in communication with an MRAM cell to be read. A read current is applied through the MRAM cell to be read, and a reference current is applied through the selected bitline. A signal voltage is sensed on the selected bitline, the signal voltage being generated in response to the read current and the reference current. The signal voltage is coupled to an input of the sense amplifier, wherein the sense amplifier provides an offset corrected output reflective of the data state of the MRAM cell.

Other References

  • A very low offset voltage auto-zero stabilized CMOS operational amplifier Daniel Dzahini, Hamid Ghazlane, Institut des Science Nucleaires, Centre National de L'Energie, des Sciences et des Techniques Nucleaires.
  • High-Speed Sensing Scheme for CMOS DRAM's Sang H. Dhong, Nicky Chau-Chun Lu, Wei Hwang, and Stephen A. Parke, IEEE Journal of Solid-State Circuits, vo 23 No 1 Feb. 1998.
  • A Novel Sensing Scheme for a MRAM with a 5% MR Ratio, Kouichi Yamada, Naofumi Sakai, Yoshiyuki Ishizuka and Kazunobu Mameno, Microelectronics Research Center, 2002 symposium on VLSI Circuits Digest of Technical Papers, p. 123-124, SANYO Electric Co., LTD., Ohmori Anpachi-cho, Gifu 503-0195, Japan.
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