Method for manufacturing bipolar devices Patent #: 6362066
ApplicationNo. 10437723 filed on 05/13/2003
US Classes:438/309, FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS438/320, Self-aligned438/364, Self-aligned438/552Having plural predetermined openings in master mask
ExaminersPrimary: Thai, Tuan V.
Attorney, Agent or Firm
International ClassH01L 21331
AbstractA disclosed embodiment is a method for fabricating an emitter structure, comprising a step of conformally depositing an undoped polysilicon layer in an emitter window opening and over a base. Next, a doped polysilicon layer is non-conformally deposited over the undoped layer. Thereafter, the steps of conformally depositing an undoped polysilicon layer and non-conformally depositing a doped polysilicon layer are repeated until the emitter window opening is filled. The method can further comprise a step of activating dopants. In another embodiment, an emitter structure is fabricated according to the above method.