Method of manufacturing a semiconductor device
December 28, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesThin-film photoelectric conversion device and a method of manufacturing the same Semiconductor, semiconductor device, and method for fabricating the same Semiconductor device and method for producing the same Thin-film photoelectric conversion device and a method of manufacturing the same Method of removing metallic contaminants from simox substrate Method of manufacturing semiconductor devices using a crystallization promoting material Thin-film transistor and semiconductor device using thin-film transistors Semiconductor thin film and semiconductor device Channel etch type bottom gate semiconductor device Photoelectric conversion device and method manufacturing same InventorsAssigneeApplicationNo. 10168139 filed on 12/28/2000US Classes:438/166, Including recrystallization step438/149, On insulating substrate or layer (e.g., TFT, etc.)257/151, External gate terminal structure or composition257/413Polysilicon laminated with silicideExaminersPrimary: Le, Dinh T.Attorney, Agent or FirmForeign Patent References
International ClassH01L 2100AbstractThe present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat treatment to carry out gettering therefor, the device is performed for the shape of the island-like insulating film on the poly-Si film which is employed when implanting phosphorus. Thereby, the area of the boundary surface between the region to which phosphorus has been added and the region to which no phosphorus has been added is increased to enhance gettering efficiency.Other References
Field of SearchOn insulating substrate or layer (e.g., TFT, etc.)Specified crystallographic orientation Having insulated gate Combined with electrical device not on insulating substrate or layer Complementary field effect transistors Vertical channel GETTERING OF SUBSTRATE By vibrating or impacting By implanting or irradiating Ionized radiation (e.g., corpuscular or plasma treatment, etc.) Hydrogen plasma (i.e., hydrogenization) And subsequent crystallization | |
