Patent 6784475 Issued on August 31, 2004. Estimated Expiration Date: December 23, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
257/295, With ferroelectric material layer257/296, Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)257/301, Capacitor in trench257/304Storage node isolated by dielectric from semiconductor substrate
A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention.