Polishing composition and polishing method employing it
July 23, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCompositions and methods for polishing Data processing apparatus for editing image by using image conversion Compositions and methods for polishing Copper-based metal polishing solution and method for manufacturing semiconductor device Polishing agent and polishing method using the same Chemical mechanical polishing slurry for metal layers and films Chemical mechanical polishing slurry useful for copper substrates Chemical mechanical polishing slurry useful for copper substrates Chemical mechanical polishing slurry useful for copper/tantalum substrates Polishing composition and polishing method employing it InventorsAssigneeApplicationNo. 10200173 filed on 07/23/2002US Classes:51/307, WITH INORGANIC MATERIAL51/308, Clay, silica, or silicate51/309, Metal or metal oxide106/3, Polishes438/692, Simultaneous (e.g., chemical-mechanical polishing, etc.)438/693, Utilizing particulate abradant216/105, Metal is elemental copper, an alloy, or compound thereof216/106Etchant contains acidExaminersPrimary: Marcheschi, MichaelAttorney, Agent or FirmForeign Patent References
International ClassesC09G 102C09G 104 AbstractA polishing composition comprising:(a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide,(b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20,(c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, α-alanine and histidine,(d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole,(e) hydrogen peroxide, and(f) water. | |
