Method for patterning a multilayered conductor/substrate structure

Patent 6762124 Issued on July 13, 2004. Estimated Expiration Date:

February 14, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

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Inventors

Assignee

Avery Dennison Corporation

Application

No. 09783122 filed on 02/14/2001

US Classes:

438/690, Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)438/706, Vapor phase etching (i.e., dry etching)438/707, Utilizing electromagnetic or wave energy438/714, Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)438/717Utilizing multilayered mask

Examiners

Primary: Kunemund, Robert
Assistant: Tran, Binh X.

Attorney, Agent or Firm

Henricks, Slavin & Holmes LLP

Foreign Patent References

0699375 EP 03/01/1996
0733931 EP 09/01/1996
02037326 JP 02/01/1990
09171188 JP 06/01/1997
096152618 JP 06/01/1997
WO9522881 WO 08/01/1995
WO9936261 WO 07/01/1999
WO9942860 WO 08/01/1999
WO9951386 WO 10/01/1999

International Class

H01L 21461

Abstract

A method for patterning a multilayered conductor/substrate structure includes the steps of: providing a multilayered conductor/substrate structure which includes a plastic substrate and at least one conductive layer overlying the plastic substrate; and irradiating the multilayered conductor/substrate structure with ultraviolet radiation such that portions of the at least one conductive layer are ablated therefrom. In a preferred embodiment, a projection-type excimer laser system is employed to rapidly and precisely ablate a pattern from a mask into the at least one conductive layer. Preferably, the excimer laser is controlled in consideration of how well the at least one conductive layer absorbs radiation at particular wavelengths. Preferably, a fluence of the excimer laser is controlled in consideration of an ablation threshold level of at least one conductive layer. According to a preferred method, the excimer laser is employed and controlled to ablate portions of the at least one conductive layer without completely decomposing the at least one functional layer therebeneath.

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