Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
Patent 6741283 Issued on May 25, 2004. Estimated Expiration Date: 
November 28, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 28, 2020. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesIntra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications Patent #: 6369853 InventorsAssigneeApplicationNo. 09724393 filed on 11/28/2000US Classes:348/308, Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)348/297, Accumulation or integration time responsive to light or signal intensity250/208.1, Plural photosensitive image detecting element arrays257/292Photodiodes accessed by FETsExaminersPrimary: Vu, Ngoc-YenAttorney, Agent or FirmInternational ClassH04N 314AbstractA storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over portions of the semiconductor substrate comprising a circuit node including the second terminal of the semiconductor transfer switch, the second terminal of the capacitive storage element and the input of the semiconductor amplifier and to prevent substantially all photons from entering the circuit node. Structures are present for preventing substantially all minority carriers generated in the semiconductor substrate from entering the circuit node. A plurality of storage pixel sensors are disposed in an array.Field of SearchPlural photosensitive image detecting element arrays2-dimensional area architecture Having alternating strips of sensor structures and register structures (e.g., interline imager) Sensors not overlaid by electrode (e.g., photodiodes) Imaging array Photodiodes accessed by FETs Photoresistors accessed by FETs, or photodetectors separate from FET chip With shield, filter, or lens Solid-state image sensor Electronic shuttering Accumulation or integration time responsive to light or signal intensity In charge coupled type image sensor With amplifier Pixel amplifiers X - Y architecture With charge transfer type output register With charge transfer type selecting register Photosensitive switching transistors or "static induction" transistors Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor) Exclusively passive light responsive elements in the matrix With diode in series with photocell Charge-coupled architecture With timing pulse generator | |
