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US Patent 6741198 - High resolution, low power, wide dynamic range imager with embedded pixel processor and DRAM storage

US Patent Issued on May 25, 2004
Estimated Patent Expiration Date: Icon_subject June 18, 2022Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
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Abstract

A high-resolution, low-power wide-dynamic-range CMOS imager includes an array of pixel imaging cells, each of which embeds with a pixel transducing circuit at the pixel level a digital arithmetic logic processing circuit and a memory circuit. This permits multi-bit analog-to-digital conversion of an electromagnetic sensor output at the pixel level. The processing and memory circuits are usable on a pixel-parallel basis in conjunction with any type of pixel transducing circuit design that produces a binary output. The pixel processing and memory circuits may be configured with pixel transducing circuits in 2-dimensional arrangements on a single substrate or in 3-dimensional arrangements of three layered substrates, and may be used in multiplexed or non-multiplexed fashion with one or several pixel transducing circuits.

Other References

  • D. X. D. Yang, B. Fowler, and A. El Gamal. “A 128 x 128 pixel CMOS Area Image Sensor with Multiplexed Pixel Level A/D Conversion,” In Digest of Technical Papers, Custom Integrated Circuits Conference, 1996.
  • S. J. Decker, R. D. McGrath, K. Brehmer, C. G. Sodini, “A 256x256 CMOS Imaging Array with Wide Dynamic Range Pixels and Column-Parallel Digital Output,” IEEE Journal of Solid State Circuits, 33(12):2081-2091, 1998.
  • T. Lule, B. Schneider, M. Boehm, Design and Fabrication of a High Dynamic Range Image Sensor in TFA Technology, IEE Journal of Solid State Circuits, 34(5):704-711, 1999.
  • D. X. D. Yang, A. El Gamal, B. Fowler, H. Tian, “A 640x512 cmos Image Sensor with Ultrawide Dynamic Range Floating-Point Pixel-Level ADC,” IEEE Journal of Solid State Circuits, 34(12):1821-1834, 1999.
  • V. Brajovic, T. Kanade, “A VLSI Sorting Image Sensor: Globally Massively Parallel Intensity-to-Time Processing for Low Latency Adaptive Vision,” IEEE Transactions on Robotics and Automation, 15(1):67-75, 1999.
  • W. Yang, “A Wide-Dynamic Range, Low-Power Photosensor Array,” In IEEE International Solid State Circuits Conference, pp. 230-231, San Francisco, CA, Feb. 1994.
  • Kleinfelder et al., “A 10,000 Frames/s CMOS Digital Pixel Sensor with Pixel-Level Memory,”In Proceedings of the 2001-IEEE International Solid-State Circuits Conference, pp. 88-89, San Francisco, CA, Feb. 2001.

Inventor

Assignee

Application

No. 10174248 filed on 06/18/2002

US Classes:

341/155, Analog to digital conversion348/308Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)

Field of Search

341/155, Analog to digital conversion348/308Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)

Examiners

Primary: Williams, Howard L.

Attorney, Agent or Firm

US Patent References

5248971, Method and apparatus for multiplexed oversampled analog to digital modulation
Issued on: 09/28/1993
Inventor: Mandl
5461425, CMOS image sensor with pixel level A/D conversion
Issued on: 10/24/1995
Inventor: Fowler, et al.
5665959, Solid-state image sensor with focal-plane digital photon-counting pixel array
Issued on: 09/09/1997
Inventor: Fossum, et al.
5699278, Focal plane processor
Issued on: 12/16/1997
Inventor: Brajovic
5801657, Serial analog-to-digital converter using successive comparisons
Issued on: 09/01/1998
Inventor: Fowler, et al.
5883830, CMOS imaging device with integrated flash memory image correction circuitry
Issued on: 03/16/1999
Inventor: Hirt, et al.
5920274, Image sensor employing non-uniform A/D conversion
Issued on: 07/06/1999
Inventor: Gowda, et al.
5962844, Active pixel image cell with embedded memory and pixel level signal processing capability
Issued on: 10/05/1999
Inventor: Merrill, et al.
6069377, Image sensor incorporating saturation time measurement to increase dynamic range
Issued on: 05/30/2000
Inventor: Prentice, et al.
6130713, CMOS active pixel cell with self reset for improved dynamic range
Issued on: 10/10/2000
Inventor: Merrill
6166367, Programmable analog arithmetic circuit for imaging sensor
Issued on: 12/26/2000
Inventor: Cho
6271785, CMOS imager with an A/D per pixel convertor
Issued on: 08/07/2001
Inventor: Martin, et al.
6330030, Digital image sensor with low device count per pixel analog-to-digital conversion
Issued on: 12/11/2001
Inventor: O'Connor
6334120, Semiconductor arithmetic circuit and data processing device
Issued on: 12/25/2001
Inventor: Shibata, et al.
6362482, High data rate smart sensor technology
Issued on: 03/26/2002
Inventor: Stettner, et al.
6369737, Method and apparatus for converting a low dynamic range analog signal to a large dynamic range floating-point digital representation
Issued on: 04/09/2002
Inventor: Yang, et al.
6377303, Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion
Issued on: 04/23/2002
Inventor: O'Connor
6552745CMOS active pixel with memory for imaging sensors
Issued on: 04/22/2003
Inventor: Perner

International Classes

H03M 112
H04N 314

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