U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Micromachined, etalon-based optical fiber pressure sensor

Patent 6738145 Issued on May 18, 2004. Estimated Expiration Date: Icon_subject March 22, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3853650

3893228

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Issued on: 05/13/1980
Inventor: Guckel ,   et al.

Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
Patent #: 4234361
Issued on: 11/18/1980
Inventor: Guckel ,   et al.

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Patent #: 4597003
Issued on: 06/24/1986
Inventor: Aine ,   et al.

Pressure sensitive element
Patent #: 4682500
Issued on: 07/28/1987
Inventor: Uda

Fabry-perot interferometer
Patent #: 4825262
Issued on: 04/25/1989
Inventor: Mallinson

Optical micropressure transducer
Patent #: 4926696
Issued on: 05/22/1990
Inventor: Haritonidis, et al.

Optical pressure-sensing system using optical resonator cavity
Patent #: 4933545
Issued on: 06/12/1990
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Inventors

Assignee

Application

No. 09814526 filed on 03/22/2001

US Classes:

356/480, Resonant cavity250/227.17, Causing polarization change in fiber385/12OPTICAL WAVEGUIDE SENSOR

Examiners

Primary: Glick, Edward J.
Assistant: Kiknadze, Irakli

Attorney, Agent or Firm

International Class

G01B 902

Abstract

An optical fiber pressure sensor having a base layer 20 with an optical fiber hole, a fiber stop layer 28 and, optionally, an etch stop layer 24. The fiber stop layer optionally has a fiber stop hole 33 that is smaller than the optical fiber 22. A diaphragm cap layer 32 is bonded to the fiber stop layer 28. The diaphragm cap layer 32 has a diaphragm 34 spaced apart from the optical fiber. The optical fiber and diaphragm form an Etalon that changes cavity length with applied pressure. Optionally, the device is made almost entirely of silicon, and so has reduced mechanical stress problems caused by thermal expansion mismatches. This allows the present sensor to be used in high temperature environments such as internal combustion engines.

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