Method and apparatus for the determination of mask rules using scatterometry Patent #: 6433878
ApplicationNo. 10/023055 filed on 12/13/2001
US Classes:430/5, Radiation mask430/30, INCLUDING CONTROL FEATURE RESPONSIVE TO A TEST OR MEASUREMENT716/19DESIGN OF SEMICONDUCTOR MASK
ExaminersPrimary: Cuneo, Kamand
Assistant: Kilday, Lisa
Attorney, Agent or Firm
International ClassG03F 1/14 (20060101)
AbstractA method and apparatus for reducing loading effects on a semiconductor manufacturing component during an etch process is disclosed. The transmittance associated with a photomask is calculated and the etch process for a material formed on a semiconductor manufacturing component is adjusted based on the transmittance calculated for the photomask.