Projection type X-ray lithography apparatus
X-ray exposure apparatus
High numerical aperture projection system for extreme ultraviolet projection lithography
Multilayer extreme ultraviolet mirrors with enhanced reflectivity
Lithographic device Patent #: 6459472
ApplicationNo. 10/124035 filed on 04/17/2002
US Classes:378/34, Lithography378/35Pattern mask
ExaminersPrimary: Glick, Edward J.
Assistant: Kiknadze, Irakli
Attorney, Agent or Firm
International ClassG03F 7/20 (20060101)
Foreign Application Priority Data2001-04-17 EP
AbstractAn EUV-transparent interface structure for optically linking a first closed chamber (80) and a second closed chamber (70) whilst preventing a contaminating flow of a medium and/or particles from one chamber to the other comprises an EUV-transparent member (60) in the form of a membrane (60) or a channel structure (100). An EUV-transparent (inert) gas (68) is forced to flow at the side of the member facing the source of contamination (LA; W) and towards the source of contamination to keep the contaminating particles away from the member (60; 100). The interface structure may be arranged between an EUV radiation source (LA) and the illuminator optics (IL) and/or between the projection system (PL) and the resist layer (RL) on top of a substrate (W) in a lithographic projection apparatus.