EUV-transparent interface structure
Patent 6683936 Issued on January 27, 2004. Estimated Expiration Date: 
April 17, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 17, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProjection type X-ray lithography apparatus X-ray exposure apparatus High numerical aperture projection system for extreme ultraviolet projection lithography Multilayer extreme ultraviolet mirrors with enhanced reflectivity Lithographic device Patent #: 6459472 InventorAssigneeApplicationNo. 10/124035 filed on 04/17/2002US Classes:378/34, Lithography378/35Pattern maskExaminersPrimary: Glick, Edward J.Assistant: Kiknadze, Irakli Attorney, Agent or FirmInternational ClassG03F 7/20 (20060101)Foreign Application Priority Data2001-04-17 EPAbstractAn EUV-transparent interface structure for optically linking a first closed chamber (80) and a second closed chamber (70) whilst preventing a contaminating flow of a medium and/or particles from one chamber to the other comprises an EUV-transparent member (60) in the form of a membrane (60) or a channel structure (100). An EUV-transparent (inert) gas (68) is forced to flow at the side of the member facing the source of contamination (LA; W) and towards the source of contamination to keep the contaminating particles away from the member (60; 100). The interface structure may be arranged between an EUV radiation source (LA) and the illuminator optics (IL) and/or between the projection system (PL) and the resist layer (RL) on top of a substrate (W) in a lithographic projection apparatus.Other References
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