Flexible hybrid memory element
Patent 6683322 Issued on January 27, 2004. Estimated Expiration Date: 
March 1, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 1, 2022. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesIntegrated circuit fusing technique Electronic matrix arrays and method for making the same Key board switch Resistive memory element Patent #: 5541869 InventorsAssigneeApplicationNo. 10/086606 filed on 03/01/2002US Classes:257/40ORGANIC SEMICONDUCTOR MATERIALExaminersPrimary: Nelms, David C.Assistant: Hoang, Quoc International ClassesG11C 17/14 (20060101)G11C 17/16 (20060101) AbstractThe invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer formed adjacent to a flexible substrate. A flexible diode structure is formed adjacent to the flexible first conductor. A flexible switch is formed adjacent to the flexible diode structure. A flexible second conductive layer is formed adjacent to the flexible switch. The flexible switch is generally formed from an organic material. The flexible diode structure is generally formed from a disordered, inorganic material. The flexible switch can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch, or the flexible switch can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch. The method includes depositing a flexible first conductive layer on a flexible substrate. A flexible disordered inorganic material is deposited on the flexible first conductor forming a plurality of flexible diode structures. A flexible organic material is deposited on the flexible disordered inorganic material, forming a plurality of flexible switches adjacent to the plurality of flexible diode structures. A flexible second conductor is deposited on the flexible organic material.Other References
| |
