Integrated circuit fusing technique
Electronic matrix arrays and method for making the same
Key board switch
Resistive memory element Patent #: 5541869
ApplicationNo. 10/086606 filed on 03/01/2002
US Classes:257/40ORGANIC SEMICONDUCTOR MATERIAL
ExaminersPrimary: Nelms, David C.
Assistant: Hoang, Quoc
International ClassesG11C 17/14 (20060101)
G11C 17/16 (20060101)
AbstractThe invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer formed adjacent to a flexible substrate. A flexible diode structure is formed adjacent to the flexible first conductor. A flexible switch is formed adjacent to the flexible diode structure. A flexible second conductive layer is formed adjacent to the flexible switch. The flexible switch is generally formed from an organic material. The flexible diode structure is generally formed from a disordered, inorganic material. The flexible switch can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch, or the flexible switch can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch. The method includes depositing a flexible first conductive layer on a flexible substrate. A flexible disordered inorganic material is deposited on the flexible first conductor forming a plurality of flexible diode structures. A flexible organic material is deposited on the flexible disordered inorganic material, forming a plurality of flexible switches adjacent to the plurality of flexible diode structures. A flexible second conductor is deposited on the flexible organic material.