Time integrating pixel sensor
December 10, 2021. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSolid-state image taking apparatus including photodiode and circuit for converting output signal of the photodiode into signal which varies with time at variation rate depending on intensity of light applied to the photodiode Correlated double sampling with up/down counter Image sensor employing non-uniform A/D conversion Digital image sensor with low device count per pixel analog-to-digital conversion Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion Random access memory integrated with CMOS sensors Patent #: 6529240 InventorsAssigneeApplicationNo. 10/012947 filed on 12/10/2001US Classes:348/308, Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)348/297, Accumulation or integration time responsive to light or signal intensity348/302X - Y architectureExaminersPrimary: Christensen, AndrewAssistant: Wisdahl, Eric Attorney, Agent or FirmInternational ClassH04N 3/15 (20060101)AbstractA time-integrating pixel sensor having a photo-detector, a capacitor, a comparator and a pixel data buffer. In operation, the photo-current from the photo-detector charges the capacitor and produces a photo-voltage. The photo-voltage sensed by the capacitor and a reference voltage is compared with the comparator. If the photo-voltage exceeds the reference voltage, a global code value is latched into the pixel data buffer. The optical power falling on the photo-detector is determined from the latched code value. An array of sensors is incorporated into a semiconductor device together with circuitry to read and decode the pixel data buffers. The reference voltage may be varied in time to increase the dynamic range of the sensor. | |
